IRF3205STRLPBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRF3205STRLPBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF3205STRLPBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.84 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (Vdss) | 55 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 110 A | β |
| Pulsed Drain Current (Idm) | 390 A | β |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΞ© max @ Vgs=10V | β |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 97.3 nC typical | 73.3 nC |
| Power Dissipation (Pd) @ Tc=25Β°C | 200 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | -55C to +175C |
| Package | TO-263-3 (D2PAK) | D2PAK (TO-263AB) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | β |
| Technology | HEXFET (advanced process) | IR MOSFET (HEXFET) |
| Packaging | Tape & Reel (STRL) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Lead-Free / RoHS | β | Yes (PBF suffix) |
| Configuration | β | Single with built-in diode |