IRF4905LPBF vs IPB110P06LMATMA1 Comparison

Detailed side-by-side comparison of IRF4905LPBF by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Active

Specification Comparison

Parameter IRF4905LPBF IPB110P06LMATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) @ Tc=25C -74 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] —
Gate-Source Voltage (Vgs) max ±20 V —
Total Power Dissipation (Ptot) @ Tc=25C 200 W —
Operating Junction Temperature -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] —
Rise Time (tr) typ [DATA_NEEDED: rise time] —
Fall Time (tf) typ [DATA_NEEDED: fall time] —
Package TO-262 (I2PAK), through-hole, 3-pin —
Technology HEXFET (IR MOSFET) OptiMOS (trench MOSFET)
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) —
Avalanche Rated Yes —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TC=25C — -100 A
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Operating Temperature Range — -55 C to +175 C (TJ)
Package / Case — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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