IRF4905PBF vs TJ30S06M3L(T6L1 Comparison
Detailed side-by-side comparison of IRF4905PBF by Infineon and TJ30S06M3L(T6L1 by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905PBF | TJ30S06M3L(T6L1 |
|---|---|---|
| Brand | Infineon | Toshiba |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.54 |
| FET Type | P-Channel | — |
| Technology | HEXFET (IR MOSFET) | U-MOS (Silicon P-Channel MOS) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Operating Temperature Range | -55 °C to +175 °C (junction) | -55°C to +175°C (Tj) |
| Package | TO-220AB (through-hole) | DPAK+ (TO-252-3) |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| MSL Level | 1 (not moisture-sensitive for TO-220) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDSS) | — | -60 V |
| Gate-Source Voltage (VGSS) | — | +10 V / -20 V |
| Continuous Drain Current (ID) @ Tc=25°C | — | -30 A |
| Power Dissipation (PD) @ Tc=25°C | — | 68 W |
| RDS(ON) Max @ VGS=-10 V | — | 21.8 mΩ |
| RDS(ON) Typ @ VGS=-10 V | — | 16.8 mΩ |
| Gate Threshold Voltage (Vth) | — | -3.0 V (typ) @ VDS=-1 mA |
| Drain Leakage (IDSS) Max | — | -10 µA @ VDS=-60 V |
| Input Capacitance (Ciss) | — | 3950 pF |
| Automotive Qualification | — | AEC-Q101 |