IRF520NPBF vs IRFR4615TRLPBF Comparison
Detailed side-by-side comparison of IRF520NPBF by Infineon and IRFR4615TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF520NPBF | IRFR4615TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Series | HEXFET | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V_DSS) | 100 V | β |
| Continuous Drain Current (I_D) at Tc | 9.7 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current value] | β |
| Gate-to-Source Voltage (V_GS) max | Β±20 V | β |
| R_DS(on) max at V_GS=10V | 200 mOhm | β |
| Total Gate Charge (Q_g) | 16.7 nC | β |
| Power Dissipation (P_D) at Tc | 48 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-220AB (through-hole) | TO-252AA (DPAK) |
| Mounting Type | Through Hole | Surface Mount |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant (Pb-free) | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| Technology | HEXFET (vertical DMOS) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TC=25C | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | β | 42 mOhm |
| Total Gate Charge (Qg) | β | 26 nC |
| Gate-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | β | 144 W |
| Avalanche Energy (EAS) | β | 109 mJ |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates Pb-free) |
| Single Pulse Avalanche Energy | β | 109 mJ |