IRF520NPBF - 100V 9.7A N-Channel HEXFET MOSFET | Infineon
MPN: IRF520NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
IRF520NPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate power in electronic circuits. The MOSFET hierarchy descends from power transistors -> discrete semiconductors -> power management components, and within Infineon's HEXFET family, the IRF520NPBF belongs to the standard-gate, mid-voltage class designed for general-purpose switching and amplification.
Key specifications include a static drain-to-source on-resistance (R_DS(on)) of 200 mOhm maximum at V_GS = 10 V, a total gate charge (Q_g) of 16.7 nC, and a power dissipation rating of 48 W at Tc. The device features a logic-compatible threshold, avalanche-rated single-pulse ruggedness, and an intrinsic body diode suitable for inductive commutation. HEXFET technology uses a vertical DMOS structure to minimize conduction loss while keeping switching losses low.
The 200 mOhm R_DS(on) at 9.7 A continuous current delivers conduction losses of roughly 19 W at full rated load, manageable with the TO-220AB copper tab. The fast switching capability (low Q_g and Q_rr) supports PWM frequencies from a few kHz to several hundred kHz, depending on driver design.
Typical applications include DC motor drives, relay and solenoid replacement, high-side/low-side switching regulators, Class D audio amplifiers, and general-purpose inverter stages. The TO-220AB package allows simple through-hole PCB assembly and easy attachment to a heatsink with a single screw.
When designing with this device, ensure V_GS = 10 V is available at the gate for full enhancement. Always include a gate-source resistor (typically 10-100 kOhm) to prevent floating-gate turn-on, and verify SOA at start-up and fault conditions.
This page synthesizes distributor pricing, drop-in same-package alternatives, and design guidance that goes beyond a single datasheet reading. We cross-reference the IRF520NPBF against pin-compatible HEXFET alternatives from Infineon and competitor N-channel MOSFETs in the TO-220AB footprint.
Drop-in alternatives for IRF520NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF520NPBF (same form factor and footprint) — differing in Package, Technology, Total Gate Charge (Qg), Operating Temperature Range, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF540NSTRLPBF
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IRFZ44NPBF
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IRLZ34NPBF
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IRF5210PBF
✅ Drop-In✓ In Stock
$2.52 / Unit
View Datasheet →IRFU9024NPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRFR4615TRLPBF
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →IRF520NPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | HEXFET |
| FET Type | N-Channel |
| Drain-to-Source Voltage (V_DSS) | 100 V |
| Continuous Drain Current (I_D) at Tc | 9.7 A |
| Gate-to-Source Voltage (V_GS) max | ±20 V |
| R_DS(on) max at V_GS=10V | 200 mOhm |
| Total Gate Charge (Q_g) | 16.7 nC |
| Power Dissipation (P_D) at Tc | 48 W |
| Operating Temperature Range | -55C to +175C |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant (Pb-free) |
| Lead-Free Finish | Yes (PBF suffix) |
| Technology | HEXFET (vertical DMOS) |
IRF520NPBF Pin Configuration
| Pin 1 | Gate — Gate control input (V_GS drive, threshold ~2-4 V, full enhancement at 10 V) |
| Pin 2 | Drain — Drain terminal (high-voltage load connection, also electrically bonded to metal tab) |
| Pin 3 | Source — Source terminal (low-side return, typically connected to circuit ground) |
Safe Operating Area (DC)
Typical Applications
IRF520NPBF is suitable for 6 applications: DC Motor Drive (H-Bridge / Half-Bridge), Relay / Solenoid Replacement (Solid-State Switch), Class D Audio Amplifier Output Stage, Linear / Switching Voltage Regulator Pass Element, Inverter / UPS Power Stage, Automotive 12V Load Switching.
DC Motor Drive (H-Bridge / Half-Bridge)
The IRF520NPBF fits low-power DC motor drive circuits at 12-48 V bus up to 9.7 A continuous. Its 200 mOhm R_DS(on) at V_GS=10V keeps conduction loss modest, while the fast HEXFET switching supports PWM frequencies from a few hundred Hz to 20 kHz for efficient speed control. The TO-220AB tab provides a clean heatsink-mount for sustained loads, and the intrinsic body diode handles inductive flyback during PWM commutation. In half-bridge and H-bridge topologies, two IRF520NPBFs (high-side plus low-side) drive brushed DC motors in robotics and small EVs.
Recommended
Relay / Solenoid Replacement (Solid-State Switch)
The IRF520NPBF acts as a low-side solid-state switch to replace mechanical relays driving 12-100 V solenoids, valves, and LED strings. Its 9.7 A continuous rating covers most automotive and industrial loads, and the 200 mOhm R_DS(on) ensures less than 2 V drop at full load. With switching times under 100 ns, the IRF520NPBF outperforms mechanical relays in lifetime and silent operation. The TO-220AB package simplifies mounting near the load, and a 10 kOhm gate pull-down prevents false turn-on during controller reset.
Recommended
Class D Audio Amplifier Output Stage
The IRF520NPBF is well-suited for low-power Class D audio amplifiers in the 50-100 W range. Its fast switching (~50 ns turn-on) keeps PWM dead-time short, preserving audio fidelity, while the 100 V rating provides ample headroom for 24-36 V bus designs. The HEXFET die ruggedness handles the high di/dt of audio output stages, and the TO-220AB tab simplifies thermal management in stereo and subwoofer amplifier assemblies. Two IRF520NPBFs per channel form a complementary half-bridge output.
Recommended
Linear / Switching Voltage Regulator Pass Element
When used as the pass element in a linear regulator or as the switching device in a buck/boost converter, the IRF520NPBF provides a 100 V / 9.7 A platform suitable for industrial 24-48 V bus designs. The 200 mOhm R_DS(on) keeps conduction loss low in synchronous rectifier positions, while the 48 W power dissipation rating handles continuous loads when properly heatsunk. For PWM switching regulators above 50 kHz, the modest 16.7 nC Q_g supports standard gate drivers without excessive drive loss.
Recommended
Inverter / UPS Power Stage
The IRF520NPBF supports low-power inverter and UPS systems operating from 24-72 V DC bus, delivering up to 9.7 A continuous for AC output stages. The HEXFET avalanche rating absorbs the energy stored in inductive loads and transformer leakage, enhancing system reliability. Two or four IRF520NPBFs in a full-bridge configuration produce modified sine-wave or square-wave output for backup power and solar micro-inverter applications. The TO-220AB package allows simple bolt-on heatsinking.
Recommended
Automotive 12V Load Switching
The IRF520NPBF operates reliably in automotive 12 V load-switching applications including lamp drivers, fan controls, and accessory relays. While not AEC-Q101 qualified, its -55C to +175C junction temperature range and HEXFET ruggedness have made it a long-standing choice for non-safety automotive subsystems. The 100 V V_DSS provides generous transient margin against load-dump events when paired with a TVS clamp. The TO-220AB tab supports chassis-mount thermal management.
Recommended
Recommended Products Summary
Engineering reference data for IRF520NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF540NSTRLPBF | IRFZ44NPBF | IRLZ34NPBF | IRF5210PBF | IRFU9024NPBF | IRFR4615TRLPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel (logic-level) | P-Channel (complement) | P-Channel | N-Channel |
| V_DSS | 100 V | 100 V | 55 V | 55 V | -100 V | -50 V | 150 V |
| Continuous Drain Current | 9.7 A | 33 A | 49 A | 30 A | -5.6 A | -11 A | 33 A |
| R_DS(on) max at V_GS=10V | 200 mOhm | 44 mOhm | 17.5 mOhm | 50 mOhm | 600 mOhm | 280 mOhm | 42 mOhm |
| Power Dissipation | 48 W | 130 W | 94 W | 68 W | 43 W | 38 W | 144 W |
Key Differentiators
- Higher current and lower R_DS(on) for motor drives above 10 A (vs IRF540NSTRLPBF)
- Lower conduction loss at low V_GS drive voltages (vs IRLZ34NPBF)
- Complementary P-channel partner for H-bridge designs (vs IRF5210PBF)
Design Notes
Estimated: At 9.7 A continuous with a V_DS drop near 200 mOhm, conduction loss reaches roughly 19 W at full rated current. TO-220AB theta_JA is around 62 C/W without heatsink, which would push junction temperature above safe limits. Always bolt the tab to a heatsink sized to keep Tj below 150 C. For lower thermal resistance, use a clip-on heatsink with thermal compound and ensure airflow over the tab.
Always include a 10 kOhm gate-to-source pull-down resistor to prevent false turn-on from Miller coupling or floating-gate conditions during controller reset. Drive V_GS to 10 V (well above the threshold) for full enhancement and lowest R_DS(on). Under-driving the gate below 8 V causes partial enhancement and dramatically higher conduction loss. For logic-level microcontrollers (3.3 V), use a gate driver or a logic-level part like IRLZ34NPBF instead.
Keep the gate drive loop short and narrow - place the gate resistor and pull-down as close to the gate pin as possible. Use a ground plane to minimize source inductance, which causes ground bounce and unwanted V_GS spikes. For high di/dt switching, add a small RC snubber (gate resistor 10-47 Ohm plus optional 100 Ohm + 1 nF across drain-source) to control ringing. The TO-220AB tab is electrically tied to the drain, so heatsink isolation is required if the drain is not at ground potential.
Compliance Information
RoHS-compliant Pb-free finish per 'PBF' suffix. Not AEC-Q100/101 qualified - not recommended for new automotive safety designs where Infineon BTS-series or IRFS-series AEC parts are preferred.
