IRF7341GTRPBF vs IRF7105TRPBF Comparison

Detailed side-by-side comparison of IRF7341GTRPBF by Infineon and IRF7105TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7341GTRPBF IRF7105TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.76 $0.30
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 5.1 A β€”
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V β€”
Power Dissipation (PD) 2.4 W β€”
Maximum Junction Temperature 175 C β€”
Configuration Dual N-Channel β€”
Technology IR HEXFET Planar MOSFET HEXFET (IR MOSFET, fifth generation)
Package 8-SO (SOIC-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] β€”
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] β€”
Operating Temperature Range -55 C to +175 C [DATA_NEEDED: junction temperature range]
RoHS Status Compliant β€”
Lead-Free Yes (PBF suffix) β€”
Manufacturer β€” Infineon Technologies
Part Series β€” IRF7105 (HEXFET Fifth Generation)
Polarity / Configuration β€” N-Channel + P-Channel, dual MOSFET in one package
Drain-to-Source Voltage (Vds) β€” 25 V
Continuous Drain Current - N-channel (Id, N-ch) β€” 3.5 A
Continuous Drain Current - P-channel (Id, P-ch) β€” 2.3 A
Rds(on) Maximum β€” 100 mOhm
Total Package Power Dissipation (Pd) β€” 2 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: typical Vgs(th)]
Packaging Form β€” Tape & Reel (TR)
Lead-Free / RoHS Status β€” Pb-free (PBF suffix), RoHS compliant
Pin Count β€” 8

Datasheets & Resources

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