IRF7105TRPBF - Dual N+P HEXFET MOSFET, 25V, 8-SO | Infineon
MPN: IRF7105TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.72 | $0.72 |
| 10 | $0.62 | $6.20 |
| 100 | $0.48 | $48.00 |
| 500 | $0.4 | $200.00 |
| 1,000 | $0.34 | $340.00 |
| 2,500 | $0.3 | $750.00 |
Drop-in alternatives for IRF7105TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7105PBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IRF7306TRPBF
✅ Drop-In✓ In Stock
$0.55 / Unit
View Datasheet →IRF7351TRPBF
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →IRF7307TRPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF7380TRPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF7105TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Series | IRF7105 (HEXFET Fifth Generation) |
| Polarity / Configuration | N-Channel + P-Channel, dual MOSFET in one package |
| Drain-to-Source Voltage (Vds) | 25 V |
| Continuous Drain Current - N-channel (Id, N-ch) | 3.5 A |
| Continuous Drain Current - P-channel (Id, P-ch) | 2.3 A |
| Rds(on) Maximum | 100 mOhm |
| Technology | HEXFET (IR MOSFET, fifth generation) |
| Package | 8-SO (SOIC-8) |
| Total Package Power Dissipation (Pd) | 2 W |
| Mounting Type | Surface Mount |
| Packaging Form | Tape & Reel (TR) |
| Lead-Free / RoHS Status | Pb-free (PBF suffix), RoHS compliant |
| Pin Count | 8 |
IRF7105TRPBF Pin Configuration
| Pin 1 | N-Gate — Gate of the N-channel MOSFET |
| Pin 2 | N-Drain — Drain of the N-channel MOSFET (or common drain tie) |
| Pin 3 | N-Source — Source of the N-channel MOSFET |
| Pin 4 | P-Source / Substrate — Source of the P-channel MOSFET, internally tied to substrate |
| Pin 5 | P-Source — Source of the P-channel MOSFET (tied to pin 4 internally) |
| Pin 6 | P-Drain — Drain of the P-channel MOSFET |
| Pin 7 | P-Gate — Gate of the P-channel MOSFET |
| Pin 8 | N-Drain — Drain of the N-channel MOSFET (tied to pin 2 internally) |
Safe Operating Area (DC, per MOSFET half)
Typical Applications
IRF7105TRPBF is suitable for 6 applications: Li-ion Battery Protection (Single-Cell), Synchronous Rectification in Low-Voltage Buck Converters, Small DC Motor and Solenoid Drive, USB Load Switch and Power Mux, Audio Amplifier Output Stage (Class-D), LED Driver Switch Element.
Li-ion Battery Protection (Single-Cell)
The IRF7105TRPBF's integrated dual N+P-channel topology fits single-cell Li-ion battery protection circuits where one MOSFET must sit on the low-side discharge path and another on the high-side charge path. The N-channel half (25V, 3.5A) handles continuous discharge currents up to 3.5A with the typical low-side protection FET role, while the P-channel half (25V, 2.3A) eliminates the need for a charge pump on the high-side gate drive. The 25V Vds gives ample transient margin above the 4.2V fully-charged cell voltage. The SO-8 footprint fits compact mobile and wearable battery PCBs.
Recommended
Synchronous Rectification in Low-Voltage Buck Converters
The IRF7105TRPBF delivers a complete synchronous-rectification pair in a single SO-8 footprint for non-isolated buck converters at 12V or below input. The N-channel half serves as the low-side synchronous rectifier with 3.5A continuous current capability, and the P-channel half can be configured as the high-side switch (or vice versa), reducing component count and shrinking the high-current loop. With logic-level Vgs(th) compatible with 3.3V and 5V PWM controllers, no gate-driver level shifter is required. The fifth-generation HEXFET process minimizes body-diode conduction and switching losses, improving converter efficiency at 200-500 kHz switching frequencies.
Recommended
Small DC Motor and Solenoid Drive
The IRF7105TRPBF is well matched to small brushed DC motor and solenoid drive circuits driven directly from a 3.3V or 5V microcontroller GPIO. The N-channel half (3.5A continuous) handles the low-side switching and the P-channel half (2.3A continuous) handles the high-side switching for an H-bridge segment. Logic-level Vgs(th) eliminates the need for a gate driver stage. The ruggedized HEXFET die absorbs the avalanche energy of the motor's inductive kickback, simplifying snubber design. The 2W package dissipation budget supports sub-1A continuous motor loads at moderate duty cycles.
Recommended
USB Load Switch and Power Mux
In USB Type-C load-switch and power-muxing circuits, the IRF7105TRPBF's P-channel half acts as the high-side load switch with the source on the system rail and drain on the load, eliminating the charge-pump requirement that an N-channel switch would impose. The N-channel half can carry the return-path or low-side gate drive for a complementary design. At 2.3A continuous P-channel rating and 100 mOhm Rds(on), the IRF7105TRPBF delivers efficient 5V switching with low dropout. The SO-8 package drops into standard 5V USB load-switch footprints.
Recommended
Audio Amplifier Output Stage (Class-D)
The IRF7105TRPBF can be used in low-power Class-D audio amplifier half-bridge output stages where the dual SO-8 footprint reduces the high-current loop between the two switching MOSFETs. The N-channel half serves as the low-side switch and the P-channel half as the high-side switch, both running at the audio PWM carrier frequency. The fifth-generation HEXFET low Rds(on) and fast switching reduce switching losses and improve amplifier THD+N. At audio output power below 5W per channel, the 2W package dissipation is comfortably handled on standard FR-4 PCB copper.
Recommended
LED Driver Switch Element
The IRF7105TRPBF's dual-channel configuration enables compact LED driver circuits where one half is the high-side PWM dimming switch and the other is the low-side freewheeling rectifier. With 3.5A N-channel and 2.3A P-channel current capability, the IRF7105TRPBF drives LED strings up to roughly 1A continuous with proper thermal management. Logic-level gate drive allows direct 3.3V MCU PWM control without a gate driver. The 25V Vds rating supports LED strings up to about 8 series LEDs from a 12V supply.
Recommended
Recommended Products Summary
Engineering reference data for IRF7105TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7105PBF | IRF7306TRPBF | IRF7351TRPBF | IRF7307TRPBF | IRF7380TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 (8-SO) | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same |
| Polarity / Configuration | N+P dual MOSFET | N+P dual | N+P dual | N+P dual | N+P dual | N+P dual |
| Drain-to-Source Voltage (Vds) | 25 V | 25 V | 30 V | 25 V | 20 V | 30 V |
| Continuous Drain Current - N-channel | 3.5 A | 3.5 A | 4.0 A | [DATA_NEEDED] | [DATA_NEEDED] | 3.6 A |
| Continuous Drain Current - P-channel | 2.3 A | 2.3 A | 3.7 A | [DATA_NEEDED] | [DATA_NEEDED] | 3.6 A |
| Rds(on) Maximum | 100 mOhm | 100 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Process | HEXFET 5th gen | HEXFET 5th gen | HEXFET | HEXFET | HEXFET | HEXFET |
| Packaging Form | Tape & Reel (Pb-free) | Tube (Pb-free) | Tape & Reel (Pb-free) | Tape & Reel (Pb-free) | Tape & Reel | Tape & Reel |
Key Differentiators
- Lowest Rds(on) in the 25V dual SO-8 HEXFET family (vs IRF7105PBF (tube variant))
- Higher Vds and current headroom vs. direct same-family parts (vs IRF7307TRPBF)
- Pin-compatible upgrade path to 30V dual SO-8 (vs IRF7306TRPBF)
Design Notes
The SO-8 package power dissipation is rated at 2W, which must be derated against PCB copper area and ambient temperature. At 1.5A continuous current through each MOSFET half with 100 mOhm Rds(on), conduction loss alone is approximately 0.225W per FET. Estimated: at full dual 3.5A N-channel and 2.3A P-channel operation (worst case), total conduction loss is roughly 0.94W, requiring a thermal copper pour of at least 1 square inch on the SO-8 thermal pad to keep junction rise under 50C. Add copper thermal vias under the drain/substrate pads to spread heat into inner PCB layers.
Place the IRF7105TRPBF such that the high-current loop between the N-channel drain and P-channel source is minimized. Keep the gate-drive traces short and route them away from the switching node to prevent dv/dt-induced gate ringing. Use a 4-layer PCB with a dedicated ground plane under the SO-8 footprint, and stitch the ground plane with vias around the periphery of the package. For switching frequencies above 200 kHz, add a small RC snubber (10-22 ohm + 1-4.7 nF) across each MOSFET half to control ringing.
Do not exceed the 25V Vds rating on either MOSFET half - transient ringing on the switching node can easily exceed this rating in buck converters with high dv/dt. Add a TVS clamp or RC snubber to limit peak Vds to under 22V. The P-channel half is internally tied to the substrate (pin 4 to pin 5), so the SO-8 thermal pad must be connected to the P-channel source, not to ground. Verify this against the IRF7105 datasheet pinout before final layout.
For synchronous-rectification layouts, place the input bypass capacitor directly across the drain of the high-side switch and the source of the low-side switch. This minimizes the high-frequency switching loop and reduces conducted EMI. For Li-ion battery protection layouts, keep the protection FETs close to the battery pack terminal to minimize the inductance of the discharge path. Use wide copper pours (at least 20 mil) for the high-current paths.
Compliance Information
Pb-free (PBF suffix) and RoHS compliant per the IRF7105TRPBF product listings. REACH compliance per Infineon product declaration. AEC-Q100 not applicable - this is a non-automotive-grade MOSFET; not qualified to AEC-Q100.
