IRF7341GTRPBF vs IRF7351TRPBF Comparison
Detailed side-by-side comparison of IRF7341GTRPBF by Infineon and IRF7351TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7341GTRPBF | IRF7351TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.76 | $0.68 |
| Drain-Source Voltage (VDS) | 55 V | 60 V |
| Continuous Drain Current (ID) | 5.1 A | 8 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | β |
| Power Dissipation (PD) | 2.4 W | 2 W |
| Maximum Junction Temperature | 175 C | β |
| Configuration | Dual N-Channel | Dual N-Channel MOSFET (Half-Bridge) |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET (HEXFET trench) |
| Package | 8-SO (SOIC-8) | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 24 nC |
| Operating Temperature Range | -55 C to +175 C | β |
| RoHS Status | Compliant | Compliant (PBF suffix = lead-free) |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF7351TRPBF |
| On-Resistance RDS(on) max | β | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | β | 0.0137 ohm (13.7 mOhm) |
| Operating Temperature | β | -55C to +150C (junction) |
| Typical Application | β | Synchronous Rectifier for Isolated DC-DC Converters |
| MSL Level | β | [DATA_NEEDED: MSL Level] |