IRF7351TRPBF - 60V 8A Dual N-Channel MOSFET SO-8 | Infineon
MPN: IRF7351TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.31 | $13.10 |
| 100 | $0.97 | $97.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.68 | $680.00 |
Drop-in alternatives for IRF7351TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7351PBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7343TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRF7306TRPBF
β Drop-Inβ In Stock
$0.55 / Unit
View Datasheet βIRF7341GTRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7351TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7351TRPBF |
| Configuration | Dual N-Channel MOSFET (Half-Bridge) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 8 A |
| On-Resistance RDS(on) max | 17.8 mOhm |
| On-Resistance RDS(on) typ (per digchips) | 0.0137 ohm (13.7 mOhm) |
| Total Gate Charge (Qg) | 24 nC |
| Power Dissipation (PD) | 2 W |
| Technology | IR MOSFET (HEXFET trench) |
| Package | 8-SO (SO-8 / SOIC-8) Surface Mount |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Typical Application | Synchronous Rectifier for Isolated DC-DC Converters |
| RoHS Status | Compliant (PBF suffix = lead-free) |
| Lead-Free | Yes |
IRF7351TRPBF Pin Configuration
| Pin 1 | G1 β Gate of MOSFET 1 |
| Pin 2 | S1 β Source of MOSFET 1 |
| Pin 3 | D1 β Drain of MOSFET 1 |
| Pin 4 | D2/S1 (switching node) β Drain of MOSFET 2 / Source of MOSFET 1 (half-bridge tap) |
| Pin 5 | D2 β Drain of MOSFET 2 |
| Pin 6 | S2 β Source of MOSFET 2 |
| Pin 7 | D1/S2 β Drain of MOSFET 1 / Source of MOSFET 2 (half-bridge tap) |
| Pin 8 | G2 β Gate of MOSFET 2 |
Safe Operating Area
Typical Applications
IRF7351TRPBF is suitable for 7 applications: Isolated DC-DC Converter Synchronous Rectifier, Secondary-Side Synchronous Rectification in Telecom Bricks, Point-of-Load (POL) Buck Converter Low-Side Switch, Motor Drive H-Bridge (Low-Voltage, Battery-Powered), Class-D Audio Output Stage, Battery Management System (BMS) Discharge Path, Hot-Swap / Inrush Current Limiter.
Isolated DC-DC Converter Synchronous Rectifier
The IRF7351TRPBF is the manufacturer's primary target: a synchronous rectifier in the secondary side of isolated DC-DC converters such as forward, half-bridge, and full-bridge topologies. With 60 V VDS, 8 A ID, and 17.8 mOhm RDS(on), it replaces lossy Schottky diode stacks on the secondary winding, lifting full-load efficiency by 3-6 percentage points in 48 V-input telecom bricks. The dual N-channel SO-8 footprint places both rectifiers next to the output inductor, minimizing switching-node parasitic inductance and reducing voltage overshoot. Per the Infineon datasheet, its 24 nC total gate charge keeps crossover loss low at 200-500 kHz switching frequencies typical of intermediate bus converters.
Recommended
Secondary-Side Synchronous Rectification in Telecom Bricks
In 48 V-input telecom isolated bricks, the IRF7351TRPBF's 60 V breakdown margin absorbs the reflected leakage-inductance spike on the secondary side without avalanche. Its 8 A continuous rating covers the typical 200-400 W output range when each FET carries roughly half the output current. Placing both dies in one SO-8 footprint halves the rectifier footprint, freeing board area for output filter magnetics and telemetry. The 17.8 mOhm RDS(on) at VGS = 10 V keeps conduction loss below 1.5 W at 8 A, allowing fanless operation. According to the Infineon datasheet, the part is rated to 150 C junction, giving sufficient thermal margin when paired with a 1-oz copper SO-8 land pattern.
Recommended
Point-of-Load (POL) Buck Converter Low-Side Switch
The IRF7351TRPBF is well-suited as the low-side synchronous FET in non-isolated POL buck converters operating from 12 V or 24 V input rails. With 60 V VDS, it tolerates 24 V transients and load-dump events typical of industrial and automotive environments. The 17.8 mOhm RDS(on) and 24 nC Qg support switching frequencies up to 500 kHz, balancing efficiency against magnetics size. Compared with discrete single MOSFETs, the dual SO-8 footprint allows the designer to place the high-side and low-side in adjacent SO-8 footprints when paired with a single-channel high-side MOSFET, simplifying layout and reducing ground-bounce.
Recommended
Motor Drive H-Bridge (Low-Voltage, Battery-Powered)
For low-voltage DC motor H-bridge drivers (cordless tools, small robotics, e-bike sub-systems), the IRF7351TRPBF provides a compact dual N-channel footprint that drives brushed DC or brushless-DC motors from 12 V to 36 V battery packs. Its 60 V VDS absorbs back-EMF spikes from inductive windings, while the 8 A continuous rating covers sub-100 W motor loads. The standard SO-8 dual pinout allows replacement of two discrete TO-220 MOSFETs, reducing PCB area by ~70 percent and weight in portable applications. Pair with a half-bridge gate driver such as IR2184 or IRS2302 for proper high-side bootstrap drive.
Recommended
Class-D Audio Output Stage
In Class-D audio amplifiers, the IRF7351TRPBF can be used as the half-bridge output switch for sub-50 W channel power. Its 17.8 mOhm RDS(on) and 24 nC Qg keep conduction and switching losses low enough that the amplifier can exceed 90 percent efficiency at 8 ohm loads, reducing heatsink requirements. The 60 V VDS margin covers the back-EMF from loudspeaker voice coils at high volume. The dual SO-8 footprint integrates the half-bridge pair next to the LC output filter, minimizing the dead-time-induced distortion. Per the Infineon datasheet, the SO-8 thermal pad requires a 1 square-inch copper pour for >1 W continuous dissipation.
Recommended
Battery Management System (BMS) Discharge Path
Multi-cell battery management systems for e-mobility and stationary storage use the IRF7351TRPBF as a low-loss discharge-path switch in 12 V to 48 V packs. Its 17.8 mOhm RDS(on) at 8 A continuous keeps full-load conduction loss under 1.5 W, extending battery runtime compared with mechanical relays. The 60 V VDS tolerates transient spikes from regenerative braking or load switching. The dual SO-8 footprint supports redundant switch pairs for fault-tolerant BMS designs. According to manufacturer datasheet, the lead-free PBF finish is compatible with Pb-free reflow profiles up to 260 C peak.
Recommended
Hot-Swap / Inrush Current Limiter
The IRF7351TRPBF can serve as the active inrush-limiter element in -48 V telecom hot-swap or 24 V industrial hot-plug controllers. Its 60 V VDS absorbs the maximum input rail plus transient ringing, and the 17.8 mOhm RDS(on) yields low voltage drop after turn-on. The dual SO-8 footprint allows paralleling the two internal MOSFETs to halve the effective RDS(on) to ~9 mOhm for higher-current rails. Gate-drive is straightforward: a controlled dV/dt ramp on the gate achieves soft-start, eliminating the input capacitor inrush spike. The part is rated to 150 C junction, providing thermal margin during the brief inrush event.
Recommended
Recommended Products Summary
Engineering reference data for IRF7351TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7351PBF | IRF7343TRPBF | IRF7306TRPBF | IRF7341GTRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SO (SO-8) | 8-SO (SO-8) | 8-SO (SO-8) | 8-SO (SO-8) | 8-SO (SO-8) |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | P+N Complementary | Dual N-Channel |
| Drain-Source Voltage VDS (V) | 60 | 60 | 55 | 30 | 55 |
| Continuous Drain Current ID (A) | 8.0 | 8.0 | 8.0 | 4.0 (P) / 6.0 (N) | 5.0 |
| On-Resistance RDS(on) max (mOhm) | 17.8 | 17.8 | 13.5 | 50 (P) / 30 (N) | 20.0 |
| Total Gate Charge Qg (nC) | 24 | 24 | 20 | [DATA_NEEDED] | 16 |
| Power Dissipation (W) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 |
| Primary Application | Isolated DC-DC sync rectifier | Same | Sync rectifier <48 V | Active clamp / load switch | High-frequency sync rectifier |
Key Differentiators
- Manufacturer-optimized for synchronous rectification in isolated DC-DC converters (vs IRF7343TRPBF)
- Dual N-channel in SO-8 saves ~50 percent board area vs two discrete MOSFETs (vs Two discrete SO-8 single N-FETs (e.g., IRLR3110ZTRPBF pair))
- Wide 60 V VDS margin for 48 V telecom rails (vs IRF7306TRPBF (30 V P+N pair))
Design Notes
Estimated: at 8 A continuous drain current and 17.8 mOhm RDS(on), conduction loss is approximately I^2 x RDS(on) = 64 x 0.0178 = 1.14 W per channel. With 2 W SO-8 power dissipation and 50 C/W typical theta_JA on a 1-oz copper 1-square-inch pour, junction temperature rises about 57 C above ambient - well below the 150 C limit. For switching loss at 300 kHz with 24 nC Qg driven by a 10 V gate, add roughly 0.3 W, totaling ~1.5 W. Increase copper area or add a topside heatsink if the design runs near 8 A in a sealed enclosure with >70 C ambient.
Solder the SO-8 drain pins (3, 5, 7) to a continuous copper pour that extends to the synchronous-rectifier output inductor. Keep the gate-drive loop (gate resistor, gate driver output, gate-source capacitor) area under 0.5 square centimeters to limit parasitic inductance and ringing. Place a 100 kohm gate-source resistor on each gate to prevent parasitic Miller turn-on during the high dv/dt switching edge. The switching-node copper (pin 4 / pin 7) should be minimized but wide enough to carry 8 A without significant voltage drop.
Do not operate the IRF7351TRPBF above 60 V VDS - even brief avalanche can degrade RDS(on). Ensure the gate-drive voltage is at least 10 V (logic-level gate drivers such as UCC27524 are NOT compatible - use a bootstrap or charge-pump driver like IR2114 or IRS2302 for high-side). Do not parallel the two internal dies for higher current without consulting the datasheet; current sharing depends on matched RDS(on) and thermal coupling. Finally, do not exceed the 245 C peak reflow temperature per JEDEC J-STD-020 - the PBF lead-free finish requires the standard Pb-free profile.
Place the IRF7351TRPBF SO-8 as close as physically possible to the secondary winding of the isolated transformer or the output inductor. Minimize the loop area of the switching node (pin 4 to pin 7 to output inductor) to reduce voltage overshoot and ringing. Use a 4-layer PCB with a continuous ground plane on layer 2 directly under the FET to provide a low-impedance thermal and electrical return path. Per the Infineon layout guideline, the source pins (2, 6) should share a wide trace back to the gate-driver ground reference to avoid ground bounce coupling into the gate-drive signal.
Compliance Information
PBF suffix denotes lead-free / RoHS-compliant per Infineon part-number convention. Not AEC-Q100 qualified - this is an industrial/telecom-grade part, not automotive. Reach status confirmed compliant per distributor listing. Halogen-free status not explicitly stated in the verified data.
