IRF7480MTRPBF vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IRF7480MTRPBF by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF7480MTRPBF
IRF7480MTRPBF - 40V 217A N-Channel StrongIRFET MOSFET | Infineon
IRF7480MTRPBF β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IRF7480MTRPBF | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF7480MTRPBF | β |
| Technology | StrongIRFET (N-Channel MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 217 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) | 2 V |
| Power Dissipation (PD) at Tc=25C | 96 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH compliance] | β |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF | β |
| Series | StrongIRFET | β |
| Channel Type | N-Channel Enhancement Mode | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Package | β | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |