IRF7480MTRPBF vs IAUC60N04S6L030HATMA1 Comparación
Comparación detallada lado a lado de IRF7480MTRPBF por Infineon y IAUC60N04S6L030HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRF7480MTRPBF | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,55 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF7480MTRPBF | — |
| Technology | StrongIRFET (N-Channel MOSFET) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 217 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum On-Resistance RDS(on) max at VGS=10V | 1.2 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V to 2.5 V (typical range, datasheet) | 2 V |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | -55 C to +175 C |
| Package Type | DirectFET Isometric ME (surface-mount LGA-style) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH compliance] | — |
| Standard Reel Quantity | 4800 pcs (ordered as IRF7480MTRPBF); 1000 pcs on 7-inch reel is IRF7480MTR1PBF | — |
| Series | StrongIRFET | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Encapsulado | — | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |