IRFB3207ZPBF vs IRL3705NPBF Comparison
Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRL3705NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB3207ZPBF | IRL3705NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.92 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRFB3207ZPBF | β |
| Series | HEXFET | β |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | HEXFET (planar cell, fifth generation) |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Silicon-Limited Drain Current | 170 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissition (PD) at TC=25C | 300 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (3-lead through-hole) | TO-220AB (3-pin through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| MSL Level | N/A (through-hole) | β |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | Yes (ruggedized single-pulse avalanche) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D) at Tc | β | 89 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | β | 170 W |
| On-Resistance R_DS(on) | β | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | 65.3 nC |
| Maximum Junction Temperature | β | 175 C |
| Gate Drive Level | β | Logic-level |
| Lead-Free (PBF suffix) | β | Yes |
| RoHS Status | β | Compliant (per PBF suffix) |