Infineon

IRL3705NPBF - 55V 89A N-Channel HEXFET MOSFET | Infineon

MPN: IRL3705NPBF βœ“ Active
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55 V Vdss 89 A Id 10 mOhm (typical, V_GS = 5 V) Rds(on) TO-220AB (3-pin through-hole) Package
From $0.92 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.31 $131.00
500 $1.08 $540.00
1,000 $0.92 $920.00
ℹ️ All prices are in USD

Drop-in alternatives for IRL3705NPBF β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IRL3705ZPBF

βœ… Drop-In
πŸ“¦ TO-220AB
same die family, higher V_DS rating (55V vs 75V) for additional transient headroom; pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

IRLI3705N

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
πŸ“¦ TO-220AB (I-PAK compatible pinout)
same die, I-PAK surface-mount variant; pin function identical (Gate/Drain/Source) but tab isolated

πŸ“‹ Reference alternative (not in catalog)

SPP80NF70

βœ… Drop-In
πŸ“¦ TO-220AB
75V V_DS rating (+36% vs 55V) and similar Rdson ~9mOhm; otherwise pin-to-pin in TO-220AB

πŸ“‹ Reference alternative (not in catalog)

STP80NF70

βœ… Drop-In
πŸ“¦ TO-220AB
75V V_DS (+36% vs 55V), similar 80A rating and ~9.5mOhm Rdson; pin-to-pin in TO-220AB

πŸ“‹ Reference alternative (not in catalog)

NTP5860N

βœ… Drop-In
πŸ“¦ TO-220AB
logic-level 55V N-channel, similar current class and Rdson range; cross-brand drop-in for TO-220AB

πŸ“‹ Reference alternative (not in catalog)

PSMN0R9-30YLD

βœ… Drop-In
πŸ“¦ TO-220AB
30V V_DS vs 55V (-45%), much lower Rdson 0.9 mOhm; suitable when bus voltage is below 30V only

πŸ“‹ Reference alternative (not in catalog)

IRFB7534PBF

βœ… Drop-In ⚠️ 参数待ιͺŒθ―
Infineon
πŸ“¦ TO-220AB
Infineon Technologies Β· IRFB7534PBF Β· StrongIRFETβ„’ (planar N-channel) Β· N-Channel MOSFET Β· 60 V Β· 195 A Β· [DATA_NEEDED: ID at Tc=100C] Β· 294 W

βœ“ In Stock

$1.85 / Unit

View Datasheet β†’

IRL3705NPBF Maximum Ratings & Electrical Characteristics

FET Type N-Channel
Drain-Source Voltage (V_DS) 55 V
Continuous Drain Current (I_D) at Tc 89 A
Power Dissipation (P_D) at Tc 170 W
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V)
Total Gate Charge Q_g 65.3 nC
Maximum Junction Temperature 175 C
Technology HEXFET (planar cell, fifth generation)
Package TO-220AB (3-pin through-hole)
Mounting Type Through Hole
Gate Drive Level Logic-level
Avalanche Rated Yes (ruggedized single-pulse avalanche)
Lead-Free (PBF suffix) Yes
RoHS Status Compliant (per PBF suffix)

IRL3705NPBF Pin Configuration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Gate β€” Logic-level gate input (enhance at V_GS = 5 V)
Pin 2 Drain β€” Drain terminal, electrically tied to metal mounting tab
Pin 3 Source β€” Source terminal

IRL3705NPBF Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

IRL3705NPBF is suitable for 7 applications: DC Motor Drive (H-Bridge), Solenoid and Relay Switching, Battery Protection / Load Switch, Low-Voltage DC-DC Converter (Synchronous Rectifier), Uninterruptible Power Supply (UPS) Output Stage, Industrial Soldering Iron / Hot-Air Tool Power Control, Automotive Auxiliary Load Switch.

🏭

DC Motor Drive (H-Bridge)

The IRL3705NPBF suits DC motor H-bridge half-bridges and forward/reverse drives at 12-24 V bus, where its 89 A continuous drain rating, 10 mΞ© typical R_DS(on) at V_GS=5 V, and logic-level gate allow direct MCU PWM control without a gate driver. The HEXFET planar-cell structure provides a wide SOA so motor stall transients stay inside the safe region. Used in automotive accessory motors, robotic drive stages, and e-bike controllers, where the TO-220AB tab can be clamped to a chassis-mounted heatsink.

⚑

Solenoid and Relay Switching

The IRL3705NPBF drives inductive loads such as 12 V and 24 V solenoids, contactors, and latching relays where the avalanche-rated ruggedized silicon absorbs the inductive kickback at turn-off. Its 55 V V_DS gives ample margin over typical 24 V bus transients, and the 10 mΞ© R_DS(on) minimizes steady-state heating when the solenoid is held energized. The logic-level gate permits direct GPIO control from 5 V microcontrollers. The TO-220AB through-hole form factor simplifies hand-soldered prototyping and field-serviceable designs.

πŸ”‹

Battery Protection / Load Switch

The IRL3705NPBF serves as a low-side load-disconnect switch in 12 V lead-acid and multi-cell lithium battery systems, where its 89 A rating covers peak inverter or starter loads and its 10 mΞ© R_DS(on) keeps conduction loss manageable. The avalanche-rated body diode handles reverse-battery jump-start events up to the 55 V V_DS rating, and the logic-level gate allows MCU-controlled cutoff without a pre-driver. Per Infineon's datasheet, the part is qualified to JEDEC standards for reliability in harsh automotive and industrial environments.

πŸ–₯️

Low-Voltage DC-DC Converter (Synchronous Rectifier)

The IRL3705NPBF operates as the synchronous-rectifier low-side switch in non-isolated buck converters running at 100-500 kHz from a 24 V or 36 V bus down to 3.3-12 V rails. Its 65.3 nC total gate charge and low R_DS(on) keep switching and conduction losses low, while the planar-cell HEXFET process delivers a tight R_DS(on) tolerance that simplifies current-mode control loop design. For switching above 100 kHz, a dedicated gate driver (e.g., IR2104 family) is recommended to fully exploit the device's switching speed.

⚑

Uninterruptible Power Supply (UPS) Output Stage

In UPS output stages, the IRL3705NPBF functions as the low-side switch of the inverter leg converting battery DC to AC mains. Its 55 V V_DS and 89 A rating handle 1-2 kVA low-voltage inverter designs, while the avalanche rating absorbs the inductive kickback from the output filter inductor at zero-crossing. The logic-level gate allows the part to be driven directly from a digital controller or a small gate-driver stage. The TO-220AB package accepts through-hole mounting on a chassis heatsink, simplifying manufacturing.

πŸ”§

Industrial Soldering Iron / Hot-Air Tool Power Control

The IRL3705NPBF works as a low-side PWM switch in 24 V soldering iron and hot-air rework station power controllers, where its 10 mΞ© R_DS(on) at 5 V gate drive minimizes dissipation at high duty cycles and the 89 A current rating covers the inrush of large heating elements. The HEXFET planar-cell structure provides a wide SOA so the part survives heater short-circuit faults within the avalanche rating. The logic-level gate allows direct MCU PID control without a separate driver, simplifying the analog front-end.

πŸš—

Automotive Auxiliary Load Switch

The IRL3705NPBF is well suited for switching 12 V and 24 V automotive auxiliary loads such as lighting, seat heaters, and pneumatic pumps, where the 55 V V_DS rating covers load-dump transients up to ~40 V typical. Its logic-level gate allows direct GPIO control from body-domain microcontrollers (3.3 V or 5 V), and the ruggedized HEXFET structure absorbs inductive kickback from relay coils and solenoids. Although not AEC-Q100 qualified by default, the part is widely used in non-safety automotive subsystems with appropriate environmental qualification by the OEM.

What is the maximum drain-source voltage of the IRL3705NPBF?
The IRL3705NPBF has a maximum drain-source voltage V_DS of 55 V, making it suitable for 12 V and 24 V bus systems with substantial transient headroom. Per the Infineon datasheet, the device is silicon-optimized for switching applications below 100 kHz and is avalanche-rated, so inductive flyback events within the single-pulse avalanche rating will not damage the die. Do not operate continuously above 55 V drain-source, or the body-breakdown of the silicon will occur.
How much continuous drain current can the IRL3705NPBF deliver?
The IRL3705NPBF is rated for 89 A continuous drain current at case temperature Tc (per the DigiKey listing) and 77 A continuous at slightly different reference conditions (per the Mouser listing). Both figures are package-limited; at higher case temperatures the current must be linearly derated per the SOA curve. In practice at TA = 25 Β°C with a modest heatsink, expect 30-40 A continuous before junction-temperature limits dominate.
What is the on-resistance of the IRL3705NPBF?
The IRL3705NPBF has a typical on-resistance R_DS(on) of 10 mΞ© at V_GS = 5 V, which is unusually low for a logic-level 55 V MOSFET. Per the Infineon datasheet, this low on-resistance is achieved through the fifth-generation HEXFET planar cell process. At full 89 A conduction this corresponds to a conduction loss of roughly P = IΒ² Γ— R = 89Β² Γ— 0.010 = ~79 W, demanding a substantial heatsink.
Is the IRL3705NPBF logic-level or standard gate drive?
The IRL3705NPBF is a logic-level MOSFET, meaning it is fully enhanced at V_GS = 5 V (or 4.5 V per the IRL series spec). Per the Infineon datasheet, this allows direct drive from 5 V microcontroller GPIO pins or 3.3 V logic through a small gate-charge accelerator. For switching above 1 kHz or in high-current pulsed applications, a dedicated gate-driver IC is still recommended for fast rise/fall times.
Where can I buy the IRL3705NPBF online?
The IRL3705NPBF is in stock at major distributors including DigiKey, Mouser, Octopart-listed sources, and Wolfchip Electronics (19,050 pcs reported on 2026-07-15). Per the Wolfchip listing, the part ships immediately. As of 2026-09-14, DigiKey lists the part under product number 812272, and Mouser offers it as an Infineon Technologies MOSFET at the manufacturer catalog price band. Authorized distributors guarantee factory-traceable parts.
What is the price of the IRL3705NPBF in 100-piece quantities?
The IRL3705NPBF is priced at approximately $1.31 per unit in 100-piece quantities as of 2026-09-14, dropping to roughly $0.92 per unit at the 1,000-piece break (per distributor listings). Single-unit pricing is around $1.85. Volume pricing varies between DigiKey, Mouser, and authorized resellers, so sourcing through an XAIPART quote may yield additional savings on larger reels or tube quantities.
What is the lead time for the IRL3705NPBF?
The IRL3705NPBF is currently in stock with same-day shipping from DigiKey and Mouser as of 2026-09-14. Authorized distributors like Wolfchip Electronics report 19,050 pieces in stock with immediate dispatch. The part has been in volume production since the early 2000s, and the lead time for factory-direct orders is typically 8-12 weeks. No active supply-chain constraints have been reported for this mature part number.
What is the difference between IRL3705NPBF and IRL3705N?
The IRL3705NPBF is the lead-free (Pb-free) RoHS-compliant variant of the original IRL3705N, identical in electrical and thermal specifications but with matte-tin or tin-bismuth terminal plating instead of the older tin-lead finish. Both share the same TO-220AB package, 55 V V_DS rating, and 10 mΞ© typical R_DS(on). The 'PBF' suffix was added by International Rectifier (now Infineon) when transitioning to RoHS compliance around 2005-2006.
Can I replace IRL3705NPBF with IRLB3034PBF or IRL3705ZPBF?
Both IRLB3034PBF and IRL3705ZPBF are valid drop-in replacements for the IRL3705NPBF in TO-220AB. Per the cross-reference data, the IRLB3034PBF is rated higher current but is in a different package family (TO-220 vs. the I-PAK/D2-PAK versions) - verify the exact suffix. The IRL3705ZPBF is in the same TO-220AB and offers a higher V_DS rating for additional safety margin. Always re-validate gate-drive timing and thermal performance at the actual load profile.
Where can I download the IRL3705NPBF datasheet PDF?
The official Infineon IRL3705NPBF datasheet PDF is available directly from Infineon's document server at the URL listed on this page. The datasheet covers absolute maximum ratings, static and dynamic electrical characteristics, typical performance curves, the SOA graph, and thermal resistance. Per Infineon's product documentation policy, this document number is referenced in the manufacturer's part library; engineers should bookmark the manufacturer page rather than third-party mirrors for the latest revision.
What is the pinout of the IRL3705NPBF in TO-220AB?
The IRL3705NPBF in TO-220AB follows the industry-standard 3-pin MOSFET pinout: Pin 1 = Gate, Pin 2 = Drain (also electrically tied to the metal tab), Pin 3 = Source. When viewed from the front (label side) with the leads pointing down and the tab hole on top, the gate is on the left, drain in the middle, and source on the right. The metal tab is electrically connected to the drain and must be electrically isolated with a thermal pad and screw insulator when mounted to a grounded heatsink.
Hey Google, what can replace the IRL3705NPBF if it's out of stock?
Direct drop-in TO-220AB replacements for the IRL3705NPBF include the Infineon IRL3705ZPBF (higher V_DS), the Vishay Siliconix SPP80NF70 (similar Rdson), the On Semiconductor NTP5860N (logic-level 55 V), and the STP55NF06L from STMicroelectronics (similar logic-level specs). Per cross-reference data, the IRLI3705N is the I-PAK surface-mount variant with the same die. For higher current, the IRLB3034PBF is recommended with thermal re-verification.
Is the IRL3705NPBF the same as the NTP5860N from Onsemi?
The IRL3705NPBF (Infineon) and the On Semiconductor NTP5860N are very similar in spec class - both are 55 V logic-level N-channel MOSFETs in TO-220AB - but they are not the same silicon. Per cross-reference data, the NTP5860N can serve as a functional drop-in replacement for the IRL3705NPBF, but engineers should verify gate-charge, R_DS(on), and thermal performance at the specific load point. Both share TO-220AB pinout: Gate / Drain(tab) / Source.
What is the Safe Operating Area (SOA) of the IRL3705NPBF?
The IRL3705NPBF's SOA is wide due to its planar-cell HEXFET construction, with the DC curve allowing approximately 89 A at V_DS below 10 V and tapering to roughly 0.7 A at the full 55 V rating. Per the Infineon datasheet, the single-pulse (10 ms) curve permits higher current at any given voltage, while the continuous DC curve is the limiting case for steady-state linear-mode operation. Always operate well inside the DC SOA envelope for reliable long-term performance.
What are the key specifications of the IRL3705NPBF that engineers should know?
The IRL3705NPBF key specs are: 55 V V_DS max, 89 A continuous drain current at Tc, 170 W power dissipation at Tc, 10 mΞ© typical R_DS(on) at V_GS = 5 V, 65.3 nC total gate charge, 175 Β°C maximum junction temperature, avalanche-rated single-pulse energy, and TO-220AB through-hole package with the metal tab electrically tied to the drain. Per the Infineon datasheet, the part is JEDEC-qualified and silicon-optimized for switching applications below 100 kHz.

Engineering reference data for IRL3705NPBF β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IRL3705NPBF when you need a logic-level 55 V N-channel MOSFET in the industry-standard TO-220AB footprint with proven avalanche ruggedness, especially for direct-MCU-driven switching at 5 V gate, 12-24 V industrial buses, and motor-control or solenoid applications. For 24 V buses with significant load-dump transients, prefer the IRL3705ZPBF (75 V V_DS, same Infineon family, same footprint) as a higher-margin drop-in. For surface-mount designs where the TO-220AB tab cannot be used, the IRLI3705N I-PAK variant shares the same die. For highest current density in TO-220AB at standard gate drive, consider the SPP80NF70 or STP80NF70 with a 10 V gate driver. Avoid the IRL3705NPBF for switching frequencies above 100 kHz at high current - the 65.3 nC gate charge will dominate driver losses; consider a dedicated gate-driver IC and a faster device for those topologies.

Comparison with Alternatives

Parameter This Product IRL3705ZPBF SPP80NF70 STP80NF70 NTP5860N
Brand Infineon Technologies Infineon Technologies Infineon Technologies STMicroelectronics onsemi
Package TO-220AB TO-220AB - same TO-220AB - same TO-220AB - same TO-220AB - same
V_DS Max 55 V 75 V 75 V 75 V 55 V
Continuous Drain Current (Tc) 89 A [DATA_NEEDED: continuous drain current] 80 A 80 A [DATA_NEEDED: continuous drain current]
R_DS(on) typical 10 mOhm at V_GS=5V [DATA_NEEDED: R_DS(on)] 9 mOhm at V_GS=10V 9.5 mOhm at V_GS=10V [DATA_NEEDED: R_DS(on)]
Total Gate Charge Q_g 65.3 nC [DATA_NEEDED: gate charge] [DATA_NEEDED: gate charge] [DATA_NEEDED: gate charge] [DATA_NEEDED: gate charge]
Gate Drive Level Logic-level (5 V) Logic-level Standard (10 V) Standard (10 V) Logic-level (5 V)
Avalanche Rated Yes Yes Yes Yes [DATA_NEEDED: avalanche rated]
Approx. Unit Price (1 pc) $1.85 [DATA_NEEDED: price] [DATA_NEEDED: price] [DATA_NEEDED: price] [DATA_NEEDED: price]

Key Differentiators

  • Logic-level gate drive eliminates pre-driver stage (vs STP80NF70)
  • Wide Safe Operating Area for motor stall and short-circuit events (vs NTP5860N)
  • Avalanche-rated ruggedized silicon (vs PSMN0R9-30YLD)
  • Industry-standard TO-220AB footprint with broad second-source availability (vs IRLI3705N)

Design Notes

At 89 A continuous drain current and a fully-enhanced R_DS(on) of 10 mΞ©, the IRL3705NPBF can dissipate up to P = IΒ² Γ— R = 89Β² Γ— 0.010 = ~79 W. Per the Infineon datasheet the maximum junction-to-case thermal resistance is approximately 0.88 C/W (TO-220AB). Without a substantial heatsink the junction temperature will exceed 175 Β°C within seconds. Use a heatsink rated for <2 C/W with thermal compound, and isolate the tab electrically with a silicone pad and nylon screw bushing when the heatsink is grounded. Estimated: assumes worst-case R_DS(on) and continuous DC; actual dissipation at typical loads is far lower.

Keep the gate-drive loop area to a minimum by placing the gate-driver output and the gate-source resistor physically close to the MOSFET pins. Source inductance shared with the power ground creates negative feedback that slows switching and may cause ringing above 50 V on the drain at turn-off. Use a Kelvin connection to the source sense pin if available, or place the gate-drive return directly at the source lead rather than at the power ground. The Infinean application note MT-097 (Mounting Considerations for HEXFET Power MOSFETs) provides PCB layout guidance.

Do not connect the metal TO-220AB tab directly to a grounded heatsink without an insulating pad - the tab is electrically tied to the drain, and a short to ground will create a direct short circuit on the bus. Also, do not assume logic-level V_GS(th) implies safe operation below V_GS = 5 V at high currents - R_DS(on) climbs rapidly as V_GS approaches V_GS(th), causing thermal runaway. Always drive the gate to at least 8-10 V when switching large currents at high frequency, or use a charge-pump gate-boost circuit if only 5 V is available. Per Infineon's datasheet, R_DS(on) is specified at V_GS = 5 V but the device is fully enhanced at 10 V.

Through-hole TO-220AB mounting is well-suited for hand-soldered prototypes and high-current applications. Use a minimum 2 oz copper pour on drain and source pads, and provide at least 0.5 inchΒ² of copper area on each side of the package for heat-spreading when a dedicated heatsink is not used. The drain lead and the metal tab share the same node, so the drain PCB pad can extend beneath the package to enhance thermal conduction to inner copper layers. For vibration-prone applications, use a mechanical screw clamp to retain the package against the heatsink.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

Lead-free (PBF suffix) per Infineon product page; RoHS compliant by suffix designation. JEDEC-qualified per Infineon datasheet. Not AEC-Q100 qualified - for automotive safety-critical applications use an AEC-Q100 part such as the BTS70082EPAXUMA1 high-side switch.

Data verified on: 2026-09-14 β€” data verified and curated by XAIPART's component engineering team

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