IRFB3306PBF vs IRFS3306PBF Comparison

Detailed side-by-side comparison of IRFB3306PBF by Infineon and IRFS3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB3306PBF IRFS3306PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.28
FET Type N-Channel N-Channel
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) at Tc=25Β°C 120 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (Vgs) max Β±20 V β€”
Rds(on) max @ Vgs=10V 4.2 mΞ© β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] β€”
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] 85 nC
Gate-Drain Charge (Qgd) typ 26 nC (nominal) β€”
Power Dissipation (Pd) at Tc=25Β°C 230 W β€”
Operating Junction Temperature -55Β°C to +175Β°C -55C to +175C
Package TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Mounting Type Through Hole Surface Mount
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) β€”
Avalanche Rated Yes β€”
Body Diode Intrinsic (avalanche-rated) β€”
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID, Tc) β€” 120 A (package limited)
Continuous Drain Current (ID, silicon limited) β€” 160 A
Gate-to-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th)]
On-Resistance RDS(on) max @ VGS=10V β€” 4.2 mOhm
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
Gate-to-Drain Charge (Qgd) typ β€” [DATA_NEEDED: Qgd nominal value]
Power Dissipation (Pd) max @ Tc=25C β€” 230 W
MSL Level β€” 1 (per JEDEC J-STD-020)
Lead-Free / RoHS β€” PbF (lead-free), RoHS compliant

Datasheets & Resources

Browse All Products Create BOM Request Quote