IRFB4020PBF vs IRFB3207ZPBF Comparison

Detailed side-by-side comparison of IRFB4020PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB4020PBF IRFB3207ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.38 $1.62
FET Type N-Channel β€”
Technology IR MOSFET (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) 200 V 75 V
Continuous Drain Current (ID) at TC 18 A β€”
Power Dissipation (PD) at TC 100 W β€”
RDS(on) Maximum 100 mOhm β€”
Gate-Source Voltage (VGS) Maximum 20 V β€”
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W β€”
Operating Junction Temperature 175 C (max) -55 C to +175 C
Package TO-220AB (through-hole) TO-220AB (3-lead through-hole)
Mounting Type Through Hole Through Hole
Pin Count 3 (Gate, Drain, Source) β€”
Lead-Free (PbF suffix) Yes β€”
Market Qualification Consumer β€”
Recommended Use Class-D audio amplifier and high-efficiency switching applications β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFB3207ZPBF
Series β€” HEXFET
Continuous Drain Current (ID) at TC=25C β€” 120 A
Silicon-Limited Drain Current β€” 170 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V β€” 4.1 mOhm
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C β€” 300 W
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)
MSL Level β€” N/A (through-hole)
Avalanche Rated β€” Yes (improved Z-variant ruggedness)

Datasheets & Resources

Browse All Products Create BOM Request Quote