IRFR4620TRLPBF vs IRFR220NTRLPBF Comparison

Detailed side-by-side comparison of IRFR4620TRLPBF by Infineon and IRFR220NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR4620TRLPBF IRFR220NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.72 $0.22
Manufacturer Infineon Technologies β€”
Part Number IRFR4620TRLPBF β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 200 V β€”
Continuous Drain Current (ID) 24 A at Tc β€”
On-Resistance (RDS(on)) 78 mOhm max at VGS=10V β€”
Gate Charge (Qg) 25 nC typical β€”
Power Dissipation (PD) 144 W at Tc β€”
Technology IR MOSFET β€”
Package / Case TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Lead Free Yes β€”
RoHS Status Compliant Compliant (Pb-free PBF suffix)
MSL Level 1 (Unlimited) 1
Polarity β€” N-Channel
Mode β€” Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 5 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) β€” 0.800 ohm (max)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge Qg]
Gate-to-Drain Charge (Qgd) β€” Low (per datasheet - HEXFET design)
Power Dissipation (Pd) at Tc=25C β€” 43 W
Operating Temperature Range β€” -55C to +150C (junction)
Package β€” TO-252AA (DPAK), 2 Leads + Tab, SC-63
Packaging β€” Tape & Reel (Left orientation - TRLPBF)
Avalanche Rated β€” Yes (HEXFET ruggedized design)
Technology Family β€” HEXFET, Planar, Generation 3

Datasheets & Resources

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