IRFR4620TRLPBF vs IRFR220NTRLPBF 对比
详细并排对比 IRFR4620TRLPBF 出自 Infineon 和 IRFR220NTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR4620TRLPBF | IRFR220NTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.72 | $0.22 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | — |
| 封装 / 外壳 | TO-252AA (DPAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C | — |
| Lead Free | Yes | — |
| RoHS 状态 | Compliant | Compliant (Pb-free PBF suffix) |
| MSL 等级 | 1 (Unlimited) | 1 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 200 V |
| Continuous Drain Current (Id) at Tc=25C | — | 5 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.800 ohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Gate-to-Drain Charge (Qgd) | — | Low (per datasheet - HEXFET design) |
| Power Dissipation (Pd) at Tc=25C | — | 43 W |
| 工作温度范围 | — | -55C to +150C (junction) |
| 封装 | — | TO-252AA (DPAK), 2 Leads + Tab, SC-63 |
| Packaging | — | Tape & Reel (Left orientation - TRLPBF) |
| Avalanche Rated | — | Yes (HEXFET ruggedized design) |
| Technology Family | — | HEXFET, Planar, Generation 3 |