IRFR5505TRLPBF vs IRF7205TRPBF Comparison

Detailed side-by-side comparison of IRFR5505TRLPBF by Infineon and IRF7205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5505TRLPBF IRF7205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel —
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC —
Power Dissipation (PD) 57 W (Tc = 25 °C) —
Operating Temperature Range -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) IR HEXFET (4th generation)
Package TO-252AA (DPAK), surface mount SO-8 (8-SO)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
MSL Level 1 —
FET Type — P-Channel MOSFET
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25°C — -4.6 A
On-Resistance RDS(on) max @ VGS=-10V — 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V — 130 mΩ
Gate Threshold Voltage VGS(th) — -1.0 V to -3.0 V
Total Gate Charge Qg — 27 nC
Power Dissipation (TC=25°C) — 2.5 W
Operating Junction Temperature — -55 °C to +150 °C
RoHS / Lead-Free — Lead-Free (PBF suffix), RoHS compliant
Packaging — Tape & Reel (TR suffix)

Datasheets & Resources

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