IRFR5505TRLPBF vs IRF7205TRPBF 对比
详细并排对比 IRFR5505TRLPBF 出自 Infineon 和 IRF7205TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR5505TRLPBF | IRF7205TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.18 |
| Polarity | P-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| VDS (Drain-Source Voltage) | -55 V | — |
| VGS (Gate-Source Voltage) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | -18 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max | 110 mOhm (VGS = -10 V) | — |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Power Dissipation (PD) | 57 W (Tc = 25 °C) | — |
| 工作温度范围 | -55 °C to +175 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC] | — |
| Technology | IR MOSFET™ (HEXFET® generation 5) | IR HEXFET (4th generation) |
| 封装 | TO-252AA (DPAK), surface mount | SO-8 (8-SO) |
| 安装类型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| MSL 等级 | 1 | — |
| FET Type | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -3.0 V |
| Total Gate Charge Qg | — | 27 nC |
| 功耗（TC=25°C） | — | 2.5 W |
| 工作结温 | — | -55 °C to +150 °C |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |