IRLR7843TRPBF vs BSC050NE2LSATMA1 Comparison
Detailed side-by-side comparison of IRLR7843TRPBF by Infineon and BSC050NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050NE2LSATMA1
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
BSC050NE2LSATMA1 β ActiveSpecification Comparison
| Parameter | IRLR7843TRPBF | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.36 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | β |
| Power Dissipation (Pd) @ Tc=25C | 140 W | β |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | β |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 34 nC | β |
| Gate-to-Source Voltage Max | Β±20 V | β |
| Avalanche Energy (Eas) | Fully characterized | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C |
| Package | TO-252AA (DPAK) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOS 25V (trench) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | β | 39 A |
| R_DS(on) max at V_GS=10V | β | 5 mOhm |
| R_DS(on) typical at V_GS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 28 W |
| RoHS Status | β | Compliant |