IRS2112STRPBF vs IRS2110SPBF Comparison

Detailed side-by-side comparison of IRS2112STRPBF by Infineon and IRS2110SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS2112STRPBF IRS2110SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL —
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC and VBS)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) —
Package 16-pin SOIC wide-body 16-SOIC (SOIC-16 W)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 C to +125 C -40 C to +125 C
MSL Level 2 (1 year floor life) 3
RoHS Status Compliant (Pb-free PBF suffix) Compliant (Pb-free)
Driver Type — High and Low Side, Half-Bridge
Number of Drivers — 2
Output Configuration — Non-Inverting
Peak Source/Sink Current — 2.5 A / 2.5 A
Offset Voltage (High-Side) — Up to 500 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (25 V abs max)
Propagation Delay (typ.) — 120 ns
Rise Time (typ.) — 25 ns
Fall Time (typ.) — 17 ns
Input Logic Compatibility — TTL / CMOS with hysteresis

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