ISC009N06LM5ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of ISC009N06LM5ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC009N06LM5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.86 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 41 A | 29 A |
| Continuous Drain Current (ID) at Tc | 348 A | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| Operating Temperature Range | -55 C to +175 C | -55 C to +150 C (junction) |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| RoHS Status | Compliant | Compliant |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |