ISC016N08NM8ATMA1 - 80V N-Ch OptiMOS 8 MOSFET | Infineon
MPN: ISC016N08NM8ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
Drop-in alternatives for ISC016N08NM8ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →ISC016N08NM8ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 8 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS max) | 80 V |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | 29 A |
| Pulsed Drain Current (IDM) at Tc | 268 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) |
| MSL Level | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
ISC016N08NM8ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input - apply 10 V VGS for full enhancement |
| Pin 2 | Source — Source (internally connected to pins 3) |
| Pin 3 | Source — Source (internally connected to pin 2) |
| Pin 4 | Kelvin Source — Kelvin-source connection for gate-drive return (improves switching performance) |
| Pin 5 | Drain — Drain (internally connected to pins 6-7 and exposed pad) |
| Pin 6 | Drain — Drain (internally connected to pins 5, 7 and exposed pad) |
| Pin 7 | Drain — Drain (internally connected to pins 5, 6 and exposed pad) |
| Pin 8 | Drain Tab — Drain thermal pad (must be soldered to PCB copper for rated power dissipation) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
ISC016N08NM8ATMA1 is suitable for 6 applications: 48 V Telecom Intermediate-Bus Synchronous Rectifier, Industrial Motor Drive H-Bridge (24 V-48 V), Hot-Swap / OR-ing Controller FET, Battery Management Protection FET (24 V / 48 V Pack), Point-of-Load (POL) Buck Converter High-Side FET, Solar Inverter DC-Side Switch.
48 V Telecom Intermediate-Bus Synchronous Rectifier
The ISC016N08NM8ATMA1 is the canonical synchronous-rectifier FET for 48 V intermediate-bus converters (IBC) in telecom and server power supplies. Its 80 V VDS comfortably covers the 48 V nominal bus plus transients, while the 1.6 mOhm typical RDS(on) at 10 V VGS minimizes conduction loss on the low-side. The OptiMOS 8 generation also reduces gate charge (Qg) and output charge (Qoss), enabling 300-600 kHz hard-switched half-bridge topologies. Placed on the low-side of a half-bridge with a complementary 80 V FET on the high side, this part drives >96% peak efficiency in 48 V-to-POL DC-DC bricks.
Recommended
Industrial Motor Drive H-Bridge (24 V-48 V)
The ISC016N08NM8ATMA1 fits industrial H-bridge and three-phase motor drive inverters operating on 24 V or 48 V DC rails. With 29 A continuous drain current (Ta), 268 A pulsed capability, and 263 W Tc dissipation, one MOSFET per switch position can drive fractional-horsepower BLDC, stepper, or brushed-DC motors. The SuperSO8 (PG-TDSON-8) exposed-drain pad gives a low 0.4 C/W Rth(JC), supporting high PWM switching frequencies up to 100 kHz without thermal runaway. The 80 V VDS rating leaves ample margin against inductive flyback in 24 V/48 V systems.
Recommended
Hot-Swap / OR-ing Controller FET
The ISC016N08NM8ATMA1 functions as the pass-FET in 48 V hot-swap and OR-ing controllers for redundant power architectures. Its low RDS(on) reduces steady-state I^2R dissipation across the FET, while the 80 V VDS handles the inrush transient and back-feed conditions during input swap. The SuperSO8 footprint permits compact, high-density blade-server and telecom shelf designs. The OptiMOS 8 cell also offers a robust linear-mode SOA for the brief startup window where the FET operates in its active region.
Recommended
Battery Management Protection FET (24 V / 48 V Pack)
For 24 V and 48 V lithium battery packs, the ISC016N08NM8ATMA1 serves as the charge/discharge protection MOSFET on the high-current path. Its 1.6 mOhm RDS(on) at 10 V VGS adds minimal voltage drop during discharge (only ~48 mV at 30 A), preserving battery capacity. The 80 V VDS withstands load-dump transients on 48 V packs during relay turn-off. Infineon's OptiMOS 8 process provides excellent short-circuit capability - critical for BMS protection where the FET must interrupt fault currents up to 268 A pulsed without failure.
Recommended
Point-of-Load (POL) Buck Converter High-Side FET
The ISC016N08NM8ATMA1 can be used as the high-side FET in 36 V-60 V input point-of-load buck converters that step down to 12 V, 5 V or 3.3 V rails. The 80 V VDS supports 48 V nominal inputs with margin, and the low 1.6 mOhm RDS(on) and gate charge enable high-frequency switching for compact POL modules. The SuperSO8 package keeps the layout small enough for sub-1 inch^2 POL solutions while dissipating up to 263 W (Tc). Infineon's datasheet shows >98% peak efficiency at 600 kHz in 48 V-to-12 V buck topologies using this MOSFET.
Recommended
Solar Inverter DC-Side Switch
In small solar inverters and PV optimizers, the ISC016N08NM8ATMA1 acts as the DC-side disconnect switch for residential string inverters handling up to 60 V VOC strings. The 80 V VDS rating covers 60 V PV strings plus transient surge, and the 29 A continuous current supports 1500 W+ inverter designs. The low RDS(on) minimizes conduction loss during peak MPPT operation, improving overall inverter efficiency. The SuperSO8 exposed-drain pad gives excellent thermal performance in sealed IP65 inverter enclosures.
Recommended
Recommended Products Summary
Engineering reference data for ISC016N08NM8ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC016N08NM8 | ISC011N06LM5ATMA1 | ISC009N06LM5ATMA1 | ISC110N12NM6ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Package | SuperSO8 / PG-TDSON-8 | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same | SuperSO8 / PG-TDSON-8 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS max) | 80 V | 80 V (same) | 60 V (-25%) | 60 V (-25%) | 120 V (+50%) | 40 V (-50%) |
| Typical RDS(on) at VGS=10V | 1.6 mOhm | 1.6 mOhm (same die) | 1.1 mOhm | 0.9 mOhm | 11 mOhm | 0.58 mOhm |
| Continuous Drain Current (ID) at Ta | 29 A | 29 A (same) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at Tc | 263 W | 263 W (same) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Generation | OptiMOS 8 | OptiMOS 8 | OptiMOS 5 (60 V) | OptiMOS 5 (60 V) | OptiMOS 6 (120 V) | OptiMOS 5 (40 V) |
| Primary Application | 48 V sync-rect, OR-ing | 48 V sync-rect, OR-ing (same) | 24 V-48 V buck high-side | High-current 24 V-48 V sync-rect | 96 V industrial bus / e-mobility | 12 V/24 V high-current OR-ing |
Key Differentiators
- Lowest RDS(on) in standard SuperSO8 at 80 V (vs ISC110N12NM6ATMA1)
- OptiMOS 8 generation - latest cell technology (vs ISC011N06LM5ATMA1 (OptiMOS 5))
- SuperSO8 (PG-TDSON-8) is the industry-standard footprint (vs All alternatives)
Design Notes
Estimated: at continuous 29 A load with 1.6 mOhm RDS(on), conduction loss alone is ~1.35 W. According to the Infineon OptiMOS 8 datasheet, the SuperSO8 (PG-TDSON-8) package has a junction-to-case thermal resistance of approximately 0.4 C/W. To sustain the 263 W (Tc) rating, the PCB must provide a copper drain-pour of at least 6 cm^2 with 2 oz copper (per the 40 x 40 x 1.5 mm FR4 evaluation board). Inadequate thermal design is the most common cause of field failures in this footprint.
Use the Kelvin-source pin (pin 4) for the gate-driver return path, not the main source pins (pins 2-3). This separates the high-current source return from the gate-drive loop, reducing gate ringing and improving switching loss by 5-10% according to Infineon application guidance. Place the input gate-loop decoupling capacitor within 5 mm of the gate-source pins. The exposed drain pad (pin 8) must be soldered to a copper pour with thermal vias (8-12 vias, 0.3 mm drill) to the inner-layer ground plane.
Do not drive the gate below the datasheet-recommended 10 V VGS - the part is rated as a 'normal-level' MOSFET and requires the full 10 V enhancement to achieve the 1.6 mOhm RDS(on). Driving with 6 V or 8 V may leave the FET partially in linear region, causing high dissipation and possible thermal runaway. Also, do not exceed +/-20 V VGS even briefly - the gate oxide will rupture. Add a 10 kohm pull-down resistor from gate to source to ensure the MOSFET stays off if the gate driver is disconnected.
Estimated: in a 48 V-to-12 V synchronous buck stage at 300 kHz and 25 A output, each ISC016N08NM8ATMA1 low-side FET sees approximately 0.4 W conduction loss (P = I^2 * R * (1-D) = 25^2 * 0.0016 * 0.75) and ~0.6 W switching loss from the OptiMOS 8 Qg. Total per-FET loss is ~1 W, well within the package's thermal envelope. For higher switching frequencies (>=600 kHz), consider Infineon's lower-Qg OptiMOS 6 variants in the same SuperSO8 footprint to keep switching losses below 1 W.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified (standard industrial grade). Halogen-free status not explicitly confirmed in the verified web data - marked as 'unknown'.
