ISC009N06LM5ATMA1 vs ISC058N04NM5ATMA1 Comparison

Detailed side-by-side comparison of ISC009N06LM5ATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC009N06LM5ATMA1 ISC058N04NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.86 $0.60
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Technology OptiMOS 5 60V N-channel trench MOSFET OptiMOS 5 trench MOSFET
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Ta 41 A —
Continuous Drain Current (ID) at Tc 348 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: VGS threshold typical] —
On-Resistance RDS(on) max at VGS=10V 0.9 mOhm —
Power Dissipation at Ta (PD) 3 W —
Power Dissipation at Tc (PD) 214 W —
Operating Temperature Range -55 C to +175 C -55C to +175C
Package PG-TSON-8-3 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant —
Product Family — OptiMOS 5 40V Normal Level
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

Datasheets & Resources

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