ISC009N06LM5ATMA1 vs ISC058N04NM5ATMA1 比較
詳細な並列比較: ISC009N06LM5ATMA1 メーカー: Infineon および ISC058N04NM5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC009N06LM5ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.86 | $0.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | OptiMOS 5 60V N-channel trench MOSFET | OptiMOS 5 trench MOSFET |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Ta | 41 A | — |
| Continuous Drain Current (ID) at Tc | 348 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS threshold typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 0.9 mOhm | — |
| Power Dissipation at Ta (PD) | 3 W | — |
| Power Dissipation at Tc (PD) | 214 W | — |
| 動作温度範囲 | -55 C to +175 C | -55C to +175C |
| パッケージ | PG-TSON-8-3 (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | Compliant | — |
| Product Family | — | OptiMOS 5 40V Normal Level |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.4 V |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |