ISC011N04NM7VATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | β |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL1 (260 Β°C peak reflow) |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| RoHS Status | β | Compliant (Green Product) |
| Built-in Body Diode | β | Yes |