ISC015N06NM5ATMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | CoolGaN G5 |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | β |
| Operating Temperature Range | -55 C to +175 C | -40 Β°C to +150 Β°C |
| Technology | Trench MOSFET (OptiMOS 5) | GaN HEMT (E-mode, enhancement-mode) |
| RoHS Status | Compliant | β |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 700 V |
| Continuous Drain Current (ID, Tc) | β | 9.3 A |
| Power Dissipation (PD, Tc) | β | 34 W |
| On-Resistance (RDS(on), max) | β | 200 mΞ© |
| Total Gate Charge (Qg) | β | 1.26 nC |
| Output Capacitance (Coss) | β | 91 pF |
| Reverse Transfer Capacitance (Crss) | β | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.2 V |
| RoHS | β | Compliant |