ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: ISC015N06NM5ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.55 | $15.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.78 | $780.00 |
| 3,000 | $0.62 | $1,860.00 |
ISC015N06NM5ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between source and drain. N-channel MOSFETs are the most common switching-device type in synchronous buck converters, motor drives, and load switches, sitting within the hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. The 'N-channel' designation means the majority carriers are electrons, which gives higher mobility and therefore lower RDS(on) for a given die area than equivalent P-channel parts.
Key differentiating specifications include: ultra-low RDS(on) of 1.5 mOhm typical at VGS=10V that minimizes conduction loss; switching-optimized OptiMOS 5 cell architecture with low gate charge and low Qrr (reverse-recovery charge) to reduce switching loss in high-frequency SMPS stages; 60V VDS rating that comfortably covers 12V and 24V rails plus transient headroom; and a PQFN 5x6 drain-down footprint that allows direct heat extraction into the PCB copper. The part also features an avalanche-rated single-pulse body diode and is qualified to JEDEC standards for industrial environments.
Technically, OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform using a refined super-junction-like geometry and thin wafer technology. The 'drain-down' PG-TDSON-8 construction exposes the die-attached drain on the bottom pad, enabling very low thermal resistance from junction to PCB (RthJA typically around 35 C/W on a 1in2 copper area). This combination of low RDS(on), low gate charge, and superior thermal performance suits high-current, high-frequency switching topologies where every milliohm of conduction loss and every nanocoulomb of switching charge directly impact efficiency and thermals.
Typical applications include synchronous rectification in 12V-48V DC-DC buck converters, hot-swap and OR-ing controllers in telecom/datacenter power distribution, high-current USB-PD and battery-management load switches, eFuse circuits, brushless DC motor drive stages, and industrial point-of-load regulators where the 60V rating provides headroom above 24V nominal buses.
When designing with this part, prioritize minimizing source-inductance loop area on the PCB and place the gate driver within 10mm of the gate pin to control ringing. The exposed drain pad must be soldered to a sufficiently large copper pour (recommended at least 25 mm^2 of 2 oz copper) to keep RthJA within datasheet limits at full load. Pay attention to maximum junction temperature of 175C and derate accordingly when continuous current exceeds 15-20A on a small footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal/design guidance that the bare datasheet does not present in one place, giving the engineer a complete purchasing and design reference.
Drop-in alternatives for ISC015N06NM5ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC015N06NM5ATMA1 (same form factor and footprint) β differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
ISC015N06NM5LF2ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$2.21 / Unit
View Datasheet βISC028N03LF2SATMA1
β Drop-Inβ In Stock
$0.86 / Unit
View Datasheet βBSC028N06NSTATMA1
β Drop-Inβ In Stock
$0.4 / Unit
View Datasheet βBSC019N08NS5ATMA1
β Drop-Inβ In Stock
$1.78 / Unit
View Datasheet βBSC014NE2LSIATMA1
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet βBSC016N06NSTATMA1
β Drop-Inβ In Stock
$0.92 / Unit
View Datasheet βISC015N06NM5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25C | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm |
| Total Power Dissipation (TA) | 3 W |
| Total Power Dissipation (TC) | 188 W |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C |
| Technology | Trench MOSFET (OptiMOS 5) |
| RoHS Status | Compliant |
| MSL (Moisture Sensitivity Level) | 1 |
ISC015N06NM5ATMA1 Pin Configuration
| Pin 1 | Source β Source connection (pin 1 of 8) |
| Pin 2 | Source β Source connection (pin 2 of 8) |
| Pin 3 | Source β Source connection (pin 3 of 8) |
| Pin 4 | Gate β Gate drive input |
| Pin 5 | Source β Source connection (pin 5 of 8) |
| Pin 6 | Source β Source connection (pin 6 of 8) |
| Pin 7 | Source β Source connection (pin 7 of 8) |
| Pin 8 | Source β Source connection (pin 8 of 8) |
| Pin PAD | Drain β Exposed thermal pad - Drain connection (drain-down package configuration) |
ISC015N06NM5ATMA1 Safe Operating Area (DC, TC=25C)
Typical Applications
ISC015N06NM5ATMA1 is suitable for 7 applications: Synchronous Rectification in 12V/24V Buck Converters, Hot-Swap and OR-ing Controllers in Telecom/Server Power Distribution, USB-PD and High-Current Load Switches, Brushless DC (BLDC) Motor Drive Half-Bridge, eFuse and Battery Protection in Battery Management Systems (BMS), Point-of-Load (POL) Regulators for FPGA/ASIC Power Rails, Solar Micro-Inverter and MPPT Switching Stage.
Synchronous Rectification in 12V/24V Buck Converters
The ISC015N06NM5ATMA1 fits synchronous rectification in 12V and 24V buck converters because its 60V VDS rating provides comfortable headroom above 24V nominal buses and its 1.5 mOhm RDS(on) at VGS=10V minimizes conduction loss on the low-side FET, where duty cycle is high. With OptiMOS 5's low Qrr (typically 50-70 nC), dead-time losses are reduced, supporting switching frequencies of 300-500 kHz. Used as the low-side FET paired with a 60V driver such as the 2EDL6014ACG2DXTMA1, it achieves peak efficiencies above 96% at 20A continuous output.
Recommended
Hot-Swap and OR-ing Controllers in Telecom/Server Power Distribution
The ISC015N06NM5ATMA1 suits 48V hot-swap and OR-ing applications in telecom and server power-distribution boards because its 60V VDS handles 48V nominal plus transient spikes to 60V, and its 1.5 mOhm RDS(on) reduces steady-state dissipation during continuous conduction. The PQFN 5x6 drain-down package extracts heat directly into the board copper, supporting 30-40A continuous current with appropriate copper area. Its avalanche-rated body diode provides robust inrush current handling when used with controllers like the BTS70041EPZXUMA1 for fast fault isolation.
Recommended
USB-PD and High-Current Load Switches
For USB Power Delivery (USB-PD) and other high-current load-switch applications, the ISC015N06NM5ATMA1's 1.5 mOhm RDS(on) and 33A continuous current rating comfortably handle 100W (20V/5A) PD profiles with low voltage drop across the switch. The 60V VDS provides robustness against inductive kick from cable parasitics, and the small PQFN 5x6 footprint keeps the switch close to the Type-C connector, minimizing trace inductance. Pair with a load-switch controller like the BTS52001ENAXUMA1 for fault-protected, controlled turn-on/off behavior in USB-PD source designs.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridge
The ISC015N06NM5ATMA1 is well-suited as the low-side FET in a 3-phase BLDC motor drive half-bridge for industrial fans, pumps, and small e-mobility because its 1.5 mOhm RDS(on) at full gate drive reduces conduction loss at high PWM duty cycles. Its 60V VDS handles 24V and 36V motor bus voltages with margin, and the PQFN 5x6 drain-down package keeps junction temperature low in continuous PWM operation. Paired with a 3-phase gate driver like the 6EDL04N02PRXUMA1 family and a XMC1300 / XMC1400 MCU, it forms a complete sub-100W motor inverter.
Recommended
eFuse and Battery Protection in Battery Management Systems (BMS)
In eFuse and battery-protection circuits of Li-ion battery management systems (BMS), the ISC015N06NM5ATMA1 acts as the disconnect FET between pack and load because its 1.5 mOhm RDS(on) limits voltage drop during normal discharge, preserving usable battery capacity at high C-rates. The 60V VDS rating supports 12S and 13S Li-ion packs (~50V max), while OptiMOS 5's avalanche-rated body diode handles reverse-current transients during pack-to-load switching. Used with battery monitoring ICs like the TLE9015 family or the BTS3028SDRATMA1 high-side driver, it provides fast (<1us) fault disconnect.
Recommended
Point-of-Load (POL) Regulators for FPGA/ASIC Power Rails
As the synchronous low-side FET in 12V-input POL regulators feeding FPGAs, ASICs, and high-current processors, the ISC015N06NM5ATMA1's 1.5 mOhm RDS(on) keeps conduction loss low at 10-30A continuous loads while the OptiMOS 5 platform's low gate charge (Qg ~80 nC typical) supports switching frequencies of 500 kHz-1 MHz for compact magnetics. The 60V VDS rating gives substantial margin above 12V input rails, and the PQFN 5x6 footprint allows dense placement near the load. Pair with digital controllers like the XDPP1148100BXUMA1 for adaptive voltage scaling on high-performance compute boards.
Recommended
Solar Micro-Inverter and MPPT Switching Stage
In small solar micro-inverters and MPPT (Maximum Power Point Tracking) switching stages, the ISC015N06NM5ATMA1 serves as the primary switching FET or synchronous rectifier because its 60V VDS handles open-circuit PV panel voltages up to ~45V (24V panel systems) with safety margin, and its 1.5 mOhm RDS(on) maximizes energy harvest efficiency. The PQFN 5x6 drain-down package enables direct PCB heat-sinking in sealed outdoor enclosures. Combined with an MPPT controller and a gate driver like the 2ED2106S06FXUMA1, it forms an efficient sub-300W solar power stage.
Recommended
Recommended Products Summary
Engineering reference data for ISC015N06NM5ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC015N06NM5LF2ATMA1 | ISC028N03LF2SATMA1 | BSC028N06NSTATMA1 | BSC019N08NS5ATMA1 | BSC016N06NSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8 (PQFN 5x6) Drain-Down - same | PG-TDSON-8 (PQFN 5x6) Drain-Down - same | PG-TDSON-8 (PQFN 5x6) - same | PG-TDSON-8 (PQFN 5x6) - same | PG-TDSON-8 (PQFN 5x6) - same |
| VDS (Drain-to-Source Voltage) | 60 V | 60 V - same | 30 V (-50%) | 60 V - same | 80 V (+33%) | 60 V - same |
| Polarity | N-Channel | N-Channel - same | N-Channel - same | N-Channel - same | N-Channel - same | N-Channel - same |
| Technology / Family | OptiMOS 5 (60V) | OptiMOS 5 (60V) - same | OptiMOS 5 (30V) | OptiMOS 5 (60V BSC series) | OptiMOS 5 (80V NS5) | OptiMOS 5 (60V NS) |
| Mounting Type | Surface Mount | Surface Mount - same | Surface Mount - same | Surface Mount - same | Surface Mount - same | Surface Mount - same |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C - same | -55 C to +175 C - same | -55 C to +175 C - same | -55 C to +175 C - same | -55 C to +175 C - same |
| RoHS Compliance | Yes | Yes - same | Yes - same | Yes - same | Yes - same | Yes - same |
Key Differentiators
- Lower RDS(on) (1.5 mOhm vs 2.8 mOhm) in the same PQFN 5x6 footprint (vs BSC028N06NSTATMA1)
- Identical die and package with Pb-free second-level interconnect qualification (vs ISC015N06NM5LF2ATMA1)
- Higher VDS rating (60V vs 30V) for 24V industrial rail robustness (vs ISC028N03LF2SATMA1)
- Lower RDS(on) (1.5 mOhm vs 1.9 mOhm) in the same PQFN 5x6 package (vs BSC019N08NS5ATMA1)
Design Notes
Estimated: at ID=20A continuous and RDS(on)=1.5 mOhm (VGS=10V, TJ=25C), conduction loss is P=I^2*R = 20^2 * 0.0015 = 0.6 W. With RthJA ~35 C/W on a 25 mm^2 (1 in^2) 2 oz copper pour on a 1.5 mm-thick FR4 PCB, junction temperature rises ~21C above ambient. To stay below TJ(max)=175C, ambient must be <154C at 20A - well within spec. At 30A continuous, dissipation rises to 1.35 W and TJ rise to ~47C, so ambient must be <128C. Use multiple thermal vias under the exposed drain pad and connect to inner-layer copper planes to lower RthJA. Avoid placing the part adjacent to hot components; allow at least 5 mm clearance on all sides for copper spread.
The PQFN 5x6 drain-down package requires the exposed pad to be soldered directly to a copper drain pad on the top layer, with an array of thermal vias (typically 9-16 vias, 0.3 mm diameter, 1.0 mm pitch) connecting to inner copper planes for heat extraction. The gate trace should be kept short (less than 10 mm) and routed away from the drain switching node to minimize gate-loop inductance. Place the gate pull-down resistor (typically 10 kOhm) as close to the gate pin as possible to prevent floating-gate turn-on during drain voltage transients. Use a kelvin source connection if available in your layout to separate gate-drive return current from the main power path.
Common pitfalls when using the ISC015N06NM5ATMA1: (1) Exceeding VGS(max)=+/-20V - use a gate-drive voltage of 10V for full RDS(on) specification, or 7-8V if you need to balance switching loss; never drive the gate directly from a 12V logic rail without regulation. (2) Ignoring SOA during turn-off transients - inductive loads can push VDS beyond 60V during switching; include a snubber or TVS clamp if dv/dt is high. (3) Body-diode reverse recovery can cause shoot-through in half-bridge topologies - use a gate-driver with adaptive dead-time (e.g., 2EDL6014ACG2DXTMA1) or accept some added dead-time loss. (4) MSL1 rating allows unlimited floor-life, but still use dry-pack handling for components stored longer than 12 months to prevent solderability degradation.
For high-current synchronous buck layouts using ISC015N06NM5ATMA1 as the low-side FET, minimize the high-di/dt power loop by placing the high-side FET, low-side FET, and input ceramic capacitors (typically 2x 22 uF 0805 ceramics in parallel) in the smallest possible loop area. Use a four-layer PCB with a continuous ground plane on layer 2 directly beneath the power loop to provide low-impedance return paths and to reduce radiated EMI. Keep the gate-driver IC within 5 mm of the gate pin and use a ground pour around the gate trace to isolate it from the drain switching node. Add a small RC snubber (10 Ohm + 1 nF) across the low-side FET if ringing exceeds 20% of VDS at turn-off.
The OptiMOS 5 platform's low Qg (~80 nC typical at VGS=10V for this part) makes the ISC015N06NM5ATMA1 compatible with most gate-driver ICs without external buffer stages. However, gate-loop inductance can cause significant gate-oscillation if the gate-driver ground return is not low-impedance. Use a dedicated gate-drive ground return trace (not the power source return) back to the driver IC ground pin. For switching frequencies above 500 kHz, consider adding a small ferrite bead (50-100 Ohm at 100 MHz) in series with the gate pin to damp high-frequency ringing without impacting switching loss. Always verify gate waveforms with a low-capacitance probe (<1 pF) at the actual gate pin, not at the driver output.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per PG-TDSON-8 package materials disclosure. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, look for the '-Q1' suffix variant if available in the Infineon product tree. Conflict-minerals compliant per Infineon's CMRT (Conflict Minerals Reporting Template) disclosures.
