IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon
MPN: IGLR70R200D2SXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.68 | $16.80 |
| 100 | $1.45 | $145.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.24 | $1,240.00 |
IGLR70R200D2SXUMA1 Overview
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap (WBG) power semiconductor that replaces conventional silicon MOSFETs and IGBTs in switched-mode power conversion. Compared to silicon, GaN transistors offer lower on-resistance per unit area, faster switching edges, zero reverse-recovery charge (Qrr), and smaller magnetic components. Within the semiconductor taxonomy, GaN HEMT sits between silicon MOSFET/IGBT and emerging silicon-carbide (SiC) MOSFETs, occupying the high-frequency, medium-to-high voltage (>600V) sweet spot.
Key features include a 1.26nC total gate charge, 91pF output capacitance, 0.21pF reverse-transfer capacitance (Crss), 1.2V gate threshold typical, and a ThinPAK top-side cooling structure that pulls heat out through the PCB copper above the die. The normally-off, E-mode configuration means it behaves like a standard MOSFET from a gate-drive perspective, simplifying driver selection versus cascode GaN.
Architecturally, the device uses Infineon's G5 CoolGaN technology, with a Schottky-gate structure and integrated ESD protection. Ultra-low Crss (0.21pF) suppresses the Miller-effect dv/dt-driven turn-on that plagues Si MOSFETs at 400V+ buses, allowing clean switching at multi-hundred-volt transitions without external snubbers.
Typical applications include 65W to 140W USB-PD laptop and smartphone adapters, telecom rectifiers, industrial SMPS, totem-pole bridgeless PFC front-ends, and solar micro-inverters. The 700V rating provides substantial 230V AC line margin. Designers choose this device when they need a few hundred kHz switching frequency to shrink magnetics, combined with a single-package, low-inductance footprint for clean gate loops.
When designing with this part, place the gate driver within 5mm of the gate pin and keep the power loop inductance below 5nH to preserve the GaN switching-edge advantage. The ThinPAK top-side cooling requires a thermal via-free copper pad directly above the die - not a standard PCB via field - to extract heat into the heatsink or inner copper plane.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes not available in the manufacturer datasheet alone, giving the working power-electronics engineer a single decision-ready reference.
Drop-in alternatives for IGLR70R200D2SXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGLR70R200D2SXUMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Product Family, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGLR70R200D2S
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IGLR70R200D2SXT
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IGLR65R190D2
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ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IGLR70R200D2SXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN G5 |
| Channel Type | N-Channel |
| Technology | GaN HEMT (E-mode, enhancement-mode) |
| Drain-Source Voltage (VDS) | 700 V |
| Continuous Drain Current (ID, Tc) | 9.3 A |
| Power Dissipation (PD, Tc) | 34 W |
| On-Resistance (RDS(on), max) | 200 mΩ |
| Total Gate Charge (Qg) | 1.26 nC |
| Output Capacitance (Coss) | 91 pF |
| Reverse Transfer Capacitance (Crss) | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V |
| Operating Temperature Range | -40 °C to +150 °C |
| Package | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| RoHS | Compliant |
IGLR70R200D2SXUMA1 Pin Configuration
| Pin 1 | G — Gate (drive input, 0V off / +6V on) |
| Pin 2 | S — Source (Kelvin reference for gate return) |
| Pin 3 | S — Source (high-current terminal) |
| Pin 4 | S — Source (high-current terminal) |
| Pin 5 | D — Drain (high-current terminal) |
| Pin 6 | D — Drain (high-current terminal) |
| Pin 7 | D — Drain (high-current terminal) |
| Pin 8 | S — Source (high-current terminal) |
Safe Operating Area (DC, TC = 25 °C)
Typical Applications
IGLR70R200D2SXUMA1 is suitable for 6 applications: USB-PD Laptop Adapters (65-140W), Totem-Pole Bridgeless PFC Front-End, Telecom Rectifier Modules (380V DC Output), Solar Micro-Inverters (300-600W), Industrial SMPS for Motor Drives, Server & Data-Center SMPS.
USB-PD Laptop Adapters (65-140W)
The IGLR70R200D2SXUMA1 is purpose-built for high-density USB-Power-Delivery laptop adapters in the 65W to 140W range. Its 700V VDS rating provides comfortable margin on 230V AC rectified busses (peak ~325V), while the 200mΩ RDS(on) and 1.26nC Qg allow the primary-side half-bridge or active-clamp flyback to switch at 200-300 kHz - roughly 2-3× higher than silicon superjunction baselines. This collapses the transformer size by ~40% and eliminates two cubic centimeters from the final adapter housing. The ThinPAK top-cooling package is ideal for the slim, thermally-constrained adapter form factor where bottom-side PCB cooling area is limited.
Recommended
Totem-Pole Bridgeless PFC Front-End
In a totem-pole bridgeless PFC, the IGLR70R200D2SXUMA1's zero reverse-recovery charge (Qrr=0) is the critical feature that silicon MOSFETs cannot provide. A conventional Si diode bridge loses 1-2% efficiency at 100 kHz; the bridgeless topology eliminates it but requires hard-commutation of the slow leg. GaN HEMTs handle the hard-commutation cleanly because there is no stored minority charge to recover. Combined with 91pF Coss and 0.21pF Crss, switching loss stays low at 200 kHz hard-switching, achieving >99% PFC efficiency at 240W output. The 9.3A continuous ID covers single-channel implementations; paralleling two devices handles 500W+.
Recommended
Telecom Rectifier Modules (380V DC Output)
The IGLR70R200D2SXUMA1 fits telecom rectifier modules that convert 230V AC to a regulated 380V DC bus, typically powering 48V intermediate bus converters and PoE injectors. Its 700V VDS is well-matched to the rectified 325V peak with adequate avalanche margin for surge events. Using GaN in the PFC + LLC combination raises module efficiency from 96% (Si baseline) to 98%, cutting wasted heat by half and shrinking the heatsink substantially. The 9.3A continuous current supports 1.5kW modules when two devices are interleaved, which is the dominant topology in modern -48V rectifier shelves.
Recommended
Solar Micro-Inverters (300-600W)
Solar micro-inverters benefit from the IGLR70R200D2SXUMA1 in both the DC-DC boost stage (PV to 400V DC link) and the DC-AC inverter leg. With typical PV inputs of 30-60V, the 700V part is over-specified for the boost stage but ideal for the inverter side which switches the 400V DC link to 230V AC at 50 kHz. Using GaN keeps the inverter efficiency above 97%, helping the micro-inverter meet European CEC-weighted efficiency regulations. The -40 °C to +150 °C operating range is critical for outdoor rooftop installations exposed to summer heat.
Recommended
Industrial SMPS for Motor Drives
Industrial three-phase motor drives require a 600-700V DC bus fed from 380-480V AC mains, typically through a PFC front-end. The IGLR70R200D2SXUMA1 supports this bus with 100V+ margin for regenerative braking transients, where the inverter pushes current back into the DC link and raises the bus voltage above nominal. The 9.3A continuous drain current covers drives up to ~5kW when paired with an inverter stage using IGBTs (e.g., IHW40N120R5XKSA1) at the lower-frequency output stage. GaN's high dv/dt immunity keeps common-mode currents in check, reducing the EMI filter burden by ~30%.
Recommended
Server & Data-Center SMPS
Hyperscale data-center CRPS (Common Redundant Power Supply) units in the 800W-2400W range benefit from GaN-based PFC front-ends using the IGLR70R200D2SXUMA1. The 80 PLUS Titanium efficiency target (>96% at 50% load) is difficult to hit with silicon at 100 kHz; GaN at 200+ kHz makes it achievable while shrinking the magnetics to fit the 1U envelope. The ThinPAK top-cooling is well-suited to the heatsink-attached, fan-cooled CRPS chassis where the bottom of the PCB is reserved for output capacitors and signal routing. Two parallel devices per phase handle 3kW+ per CRPS unit.
Recommended
Recommended Products Summary
Engineering reference data for IGLR70R200D2SXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGLR70R200D2S | IGLR70R200D2SXT | IGLR65R190D2 | IGLR80R360D2 | IGLD60R190D1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-8 (ThinPAK) | PG-TSON-8-8 (ThinPAK) - same | PG-TSON-8-8 (ThinPAK) - same | PG-TSON-8-8 (ThinPAK) - same | PG-TSON-8-8 (ThinPAK) - same | PG-TSON-8-8 (ThinPAK) - same |
| Drain-Source Voltage (VDS) | 700 V | 700 V | 700 V | 650 V | 800 V | 600 V |
| On-Resistance (RDS(on), max) | 200 mΩ | 200 mΩ | 200 mΩ | 190 mΩ | 360 mΩ | 190 mΩ |
| Technology | GaN HEMT (E-mode) | GaN HEMT (E-mode) | GaN HEMT (E-mode) | GaN HEMT (E-mode) | GaN HEMT (E-mode) | GaN HEMT (E-mode) |
Key Differentiators
- ThinPAK top-cooling vs conventional bottom-cooling (vs Conventional Si MOSFETs in DPAK/D2PAK)
- Sub-1pF Miller capacitance Crss = 0.21 pF (vs Typical 700V Si superjunction MOSFET)
- Zero reverse-recovery charge (Qrr = 0) (vs Silicon MOSFET body-diode Qrr)
Design Notes
Layout is critical for GaN. Keep the gate-driver loop (gate-driver output → gate → source-Kelvin → driver ground return) below 2 nH by placing the driver within 5 mm of the gate pin and routing the gate trace over a continuous ground return. The power loop (DC+ → FET → DC-) should also be minimized, ideally below 5 nH, to suppress ringing that would otherwise force a snubber or slow the switching edge. The ThinPAK package exposes a top-side thermal pad; do NOT place thermal vias directly under the die - use a top-side copper pour or heatsink contact instead.
Gate-drive voltage must be 0 V off / +6 V on, with absolute maximum of +7 V. Driving above 7 V accelerates gate-stress failure; driving below +4.5 V risks incomplete enhancement and high RDS(on). Use an isolated gate driver with a regulated 6 V rail (e.g., 1ED3124MC12HXUMA1 or Si8271) fed from a 12 V supply through a series LDO or Zener. A 10-47 Ω gate-source resistor damps parasitic ringing; do not exceed 100 Ω as this slows switching and raises loss.
Top-side cooling via the ThinPAK exposed pad removes heat upward rather than through the PCB, enabling higher power density in slim adapters. Estimate thermal performance with θJA ≈ 35-40 °C/W when the top pad is bonded to a 30×30 mm copper pour with no heatsink, falling to ~10 °C/W with a 1 °C/W thermal interface material to an aluminum chassis. At full 9.3 A DC conduction, junction-to-ambient rise is roughly 17.3 W × 35 °C/W ≈ 605 °C without heatsink - heatsink is mandatory for continuous DC operation.
Compliance Information
RoHS and halogen-free per Infineon product page and LCSC listing. Not AEC-Q100 qualified (industrial/consumer part); for automotive GaN, see Infineon CoolGaN automotive portfolio.
