ISC015N06NM5ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | β |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | MSL1 (260 Β°C peak reflow) |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| Built-in Body Diode | β | Yes |