ISC015N06NM5ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 30V |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | 24 A |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | β |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| RoHS Status | Compliant | β |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |