ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
MPN: ISC028N03LF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.39 | $139.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 5,000 | $0.86 | $4,300.00 |
Drop-in alternatives for ISC028N03LF2SATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →ISC028N03LF2SATMA1-VB
✅ Drop-In📋 Reference alternative (not in catalog)
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View Datasheet →ISC028N03LF2SATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 30V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) max | 30 V |
| Continuous Drain Current (ID) at TA=25C | 24 A |
| Continuous Drain Current (ID) at TC=25C | 128 A |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | 2.35 V |
| Power Dissipation at TA | 3 W |
| Power Dissipation at TC | 83 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount |
| RoHS / Lead-Free | Yes (RoHS compliant) |
| MSL Level | 1 (per JEDEC J-STD-020) |
ISC028N03LF2SATMA1 Pin Configuration
| Pin 1 | D — Drain (also connected to exposed pad) |
| Pin 2 | D — Drain (also connected to exposed pad) |
| Pin 3 | D — Drain (also connected to exposed pad) |
| Pin 4 | G — Gate |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Estimated Safe Operating Area (DC), PG-TDSON-8-62
Typical Applications
ISC028N03LF2SATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter, Hot-Swap / Load Switch on 12V Distribution, Li-ion Battery Protection (4S Pack, 16.8V max), USB-PD Power Path Switch, Motor Drive H-Bridge (Low-Side Switch, <24V Bus), Power ORing / Redundant Supply Selection.
12V Synchronous Buck Converter
The ISC028N03LF2SATMA1 is well suited as both the high-side and low-side MOSFET in a 12V-input synchronous buck converter. With 2.8 mOhm max RDS(on) at VGS=10V and the low Qg of the OptiMOS 5 30V family, conduction and switching losses are minimized at switching frequencies up to 1 MHz. The 30V VDS rating provides comfortable margin above 12V rails and transient ringing, while the PG-TDSON-8 exposed pad couples heat efficiently into the PCB copper pour. Designers should target at least 10V gate drive and 1 square inch of 2-oz copper to keep junction temperature below 100C at full load.
Recommended
Hot-Swap / Load Switch on 12V Distribution
In server and telecom 12V distribution rails, the ISC028N03LF2SATMA1 functions as a low-side or high-side load switch with inrush current limiting. Its 2.8 mOhm RDS(on) keeps full-load conduction loss below 1W at 24A (P = I^2 x R = 1.6W), and the 128A TC continuous rating gives multi-fold headroom over typical 12V rail currents. The OptiMOS 5 cell provides a robust SOA at high peak currents during load transients, and the PG-TDSON-8 footprint simplifies thermal layout. Use a gate resistor (10-100 ohm) to control dV/dt-induced turn-on of the body diode during reverse recovery events.
Recommended
Li-ion Battery Protection (4S Pack, 16.8V max)
Inside a 4S Li-ion battery pack with a 16.8V fully charged voltage, the ISC028N03LF2SATMA1 30V VDS rating provides safe headroom for the protection FET position. Its 2.8 mOhm RDS(on) keeps the discharge path loss low, and the 24A continuous rating covers most consumer e-mobility and power-tool current levels. The exposed PG-TDSON-8 pad supports the thermal dissipation needed during sustained high discharge. As a drop-in upgrade for higher voltage packs (5S/6S), the ISC015N06NM5LF2ATMA1 (60V) offers similar RDS(on) with additional VDS margin.
Recommended
USB-PD Power Path Switch
USB-PD 3.1 applications using the 12V or 20V fixed-PDO require a power-path MOSFET capable of 5A continuous with minimal conduction loss. The ISC028N03LF2SATMA1's 2.8 mOhm RDS(on) delivers less than 0.15V drop at 5A (P = I^2 x R = 0.07W) along the VBUS path. The 30V VDS comfortably handles USB-PD EPR 28V transient levels with margin. The PG-TDSON-8 5x6 mm footprint is well suited to the dense layout of USB-PD dongles and docking stations. Pair with a USB-PD controller for fast role swap and current foldback behavior.
Recommended
Motor Drive H-Bridge (Low-Side Switch, <24V Bus)
In a 12V-24V brushed DC or low-voltage BLDC motor drive H-bridge, the ISC028N03LF2SATMA1 can serve as the low-side switch in each half-bridge leg. The 24A continuous rating (TA) and 128A pulsed capability (TC) provide ample peak-current margin for motor-start transients. The 2.8 mOhm RDS(on) keeps conduction loss manageable during PWM at 20-50 kHz. The OptiMOS 5 generation's low Qrr reduces dead-time losses in hard-switching bridges. Use a dedicated gate driver such as the IR2104STRPBF and ensure the bootstrap supply reaches at least 10V for full enhancement of the high-side switch.
Recommended
Power ORing / Redundant Supply Selection
For redundant 12V power-supply ORing in server and networking equipment, the ISC028N03LF2SATMA1 placed back-to-back with a common-source configuration provides reverse-current blocking with only one FET drop. The 2.8 mOhm RDS(on) at VGS=10V keeps the ORing drop under 100 mV at 30 A, well within the supply tolerance. The 30V VDS rating supports 12V nominal with headroom for load transients and ringing. The exposed PG-TDSON-8 pad distributes heat across the PCB copper; aim for at least 2 square inches of 2-oz copper to sustain ORing at full load.
Recommended
Recommended Products Summary
Engineering reference data for ISC028N03LF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC015N06NM5LF2ATMA1 | ISC037N12NM6ATMA1 | ISZ033N03LF2SATMA1 | ISC028N03LF2SATMA1-VB |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-62 (5x6 mm) | PG-TDSON-8-62 (5x6 mm) - same | PG-TDSON-8-62 (5x6 mm) - same | PG-TDSON-8-62 (5x6 mm) - same | DFN8 (5x6 mm) - same |
| VDS max | 30 V | 60 V | 120 V | 30 V | 30 V |
| RDS(on) max at VGS=10V | 2.8 mOhm | 1.5 mOhm | 3.7 mOhm | 3.3 mOhm | [DATA_NEEDED] |
| Continuous ID at TA=25C | 24 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 160 A (per VBsemi listing) |
| Continuous ID at TC=25C | 128 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| VGS(th) typ | 2.35 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation at TC | 83 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualified | No (standard grade) | No | No | No | No |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in Infineon 30V OptiMOS 5 PG-TDSON-8 family (vs ISZ033N03LF2SATMA1)
- Drop-in upgrade path within the same footprint (vs ISC015N06NM5LF2ATMA1)
- Higher 128A TC continuous current rating than the typical 30V-class part (vs ISC028N03LF2SATMA1-VB (VBsemi))
Design Notes
Estimated: at full 24A TA current, conduction loss is approximately P = I^2 x R = 24^2 x 0.0028 = 1.6W. With the PG-TDSON-8-62 thermal resistance theta_JA of approximately 50 C/W on a 1 sq-inch 2-oz copper pour, junction temperature rise is roughly 80 C above 25 C ambient - leaving margin to the 175 C maximum. For continuous operation near 100 A TC, ensure the PCB copper is increased to at least 2-3 sq inches and consider adding thermal vias under the exposed pad.
Solder the exposed thermal pad directly to a top-side copper pour sized for the design current; place 6-12 thermal vias (0.3 mm drill, 0.6 mm pad) directly under the pad to inner-layer copper heatsinks. Keep the gate-trace short (<10 mm) and route it away from the drain switching node to minimize parasitic inductance and dV/dt-induced false turn-on. Place a 10-100 ohm gate resistor close to the gate pin to dampen ringing.
Do not rely on the 4.5 V VGS drive from a 3.3 V logic-level GPIO - this part needs a true 10 V gate drive to achieve the published 2.8 mOhm RDS(on). Using 4.5 V can raise RDS(on) above 4 mOhm, doubling conduction loss. For logic-level drive applications, select a logic-level OptiMOS part or add a gate-driver bootstrap supply. Also verify the SOA curve for inductive-load switching (motor/relay) - the published 30V VDS is the absolute maximum, not the operating point.
Compliance Information
RoHS compliant and lead-free per Infineon product page and DigiKey listing. Standard industrial grade - not AEC-Q100 qualified; for automotive applications select an Infineon part with the -A or -Q suffix.
