ISC015N06NM5ATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Series | β | StrongIRFET 2 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |