ISC015N06NM5ATMA1 vs ISZ072N06NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC015N06NM5ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N06NM5ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA=25C | 33 A | β |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | β |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | β |
| Total Power Dissipation (TA) | 3 W | β |
| Total Power Dissipation (TC) | 188 W | β |
| Package | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C ( Tj max 175C ) |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 6 trench MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | β |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 57 A |
| Continuous Drain Current (ID, Ta) | β | 12.7 A |
| RDS(on) max @ VGS=10V | β | 7.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V (typ) |
| Power Dissipation (Tc=25Β°C) | β | 50 W |
| Power Dissipation (Ta) | β | 2.5 W |
| MSL Level | β | 1 |