ISC024N08NM7ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of ISC024N08NM7ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC024N08NM7ATMA1
ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
ISC024N08NM7ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | ISC024N08NM7ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 3 |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 80 V | β |
| Continuous Drain Current (Id) at Ta=25C | 24 A | β |
| Continuous Drain Current (Id) at Tc | 167 A | β |
| Power Dissipation (Pd) at Ta=25C | 3 W | β |
| Power Dissipation (Pd) at Tc | 150 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8 (SSO8) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Operating Temperature Range | -55 C to +175 C | β |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | β |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | β |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Technology | OptiMOS 7 trench MOSFET | Trench MOSFET (OptiMOS 3) |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |