ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: ISC024N08NM7ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
ISC024N08NM7ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or convert electrical energy in power-electronics systems. N-channel MOSFETs (where the conducting channel carries electrons rather than holes) are preferred in low-voltage, high-current synchronous rectification because of their superior Rds(on) per unit silicon area. Within the broader taxonomy, the ISC024N08NM7 belongs to: power MOSFET -> N-channel MOSFET -> discrete semiconductor -> power-management component. The OptiMOS 7 platform specifically targets high-frequency SMPS, OR-ing, hot-swap, and motor-drive stages where switching losses dominate total losses.
Key features include ultra-low typical Rds(on) at 10 V Vgs, a logic-level-compatible gate threshold, fast switching transitions, and integrated gate protection. The PG-TDSON-8 footprint with exposed top-side cooling tab enables direct PCB heatsinking, achieving junction-to-ambient thermal resistance that supports high continuous current without external heat sinks in typical board designs.
The OptiMOS 7 technology uses an advanced trench cell and ultra-thin wafer backside processing. This delivers roughly 30% lower Rds(on) and 50% lower gate charge (Qg) than the prior OptiMOS 5 generation, enabling higher switching frequencies and lower conduction losses in 48 V telecom, e-mobility auxiliary, and industrial power-conversion designs. The part is qualified to industrial-grade reliability standards and is halogen-free.
Typical applications include synchronous rectification in isolated DC-DC converters (telecom 48 V bus), hot-swap / OR-ing controllers in server power distribution, motor-drive half-bridges for low-voltage brushless DC motors, battery protection circuits in e-bikes and power tools, and USB-PD / high-current Type-C sink stages. The wide safety margin between 80 V Vdss rating and typical 48 V rails ensures robust avalanche tolerance during transients.
When designing with this device, keep the gate-drive loop as short as possible to minimize parasitic inductance; the low Qg allows CMOS gate drivers (such as the 1ED020I12B2XUMA1) to switch the device cleanly. Pay attention to the PG-TDSON-8 thermal pad layout - place sufficient vias beneath the exposed pad to maintain rated continuous current.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB layout notes that go beyond the manufacturer's datasheet, helping procurement and design engineers make a faster, more confident decision on the ISC024N08NM7ATMA1.
Drop-in alternatives for ISC024N08NM7ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC024N08NM7ATMA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Product Family, MSL Level.
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View Datasheet →ISC015N06NM5ATMA1
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View Datasheet →ISC024N08NM7ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 80 V |
| Continuous Drain Current (Id) at Ta=25C | 24 A |
| Continuous Drain Current (Id) at Tc | 167 A |
| Power Dissipation (Pd) at Ta=25C | 3 W |
| Power Dissipation (Pd) at Tc | 150 W |
| Mounting Type | Surface Mount |
| Package / Case | PG-TDSON-8 (SSO8) |
| Operating Temperature Range | -55 C to +175 C |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET |
ISC024N08NM7ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1) |
| Pin 2 | Source — Source connection (pin 2) |
| Pin 3 | Source — Source connection (pin 3) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (pin 5) |
| Pin 6 | Source — Source connection (pin 6) |
| Pin 7 | Source — Source connection (pin 7) |
| Pin 8 | Drain — Drain connection and exposed thermal pad |
ISC024N08NM7ATMA1 Safe Operating Area (estimated placeholder)
Typical Applications
ISC024N08NM7ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectifier, Hot-Swap and OR-ing Controller Switch, Brushless DC Motor Drive Half-Bridge, USB-PD 100W Sink Stage, E-Bike / Power-Tool Battery Protection, Solar Micro-Inverter / MPPT Stage.
48V Telecom Synchronous Rectifier
The ISC024N08NM7ATMA1 is ideally suited as the low-side synchronous rectifier in 48 V isolated DC-DC converters for telecom and datacom power systems. Its 80 V Vdss provides a 30 V safety margin above nominal 48 V rails, comfortably absorbing inductive transients and lightning surge events on long bus cables. The OptiMOS 7 cell delivers roughly 50% lower Qg than the OptiMOS 5 generation, allowing 200 kHz+ switching frequencies that shrink magnetic component size. With 167 A Tc-rated continuous current and 150 W power dissipation, the device can deliver 1.5 kW per phase in a single PG-TDSON-8 footprint. Designers should pair it with a half-bridge gate driver such as the 1ED020I12B2XUMA1 (also in our Site MPN list) and follow the Infineon land-pattern note for 6 cm2 drain copper area on FR4 to achieve the rated continuous current.
Recommended
Hot-Swap and OR-ing Controller Switch
In 48 V server backplanes and battery-backed power shelves, the ISC024N08NM7ATMA1 acts as the main pass-FET in a hot-swap or OR-ing circuit. Its ultra-low Rds(on) at 10 V Vgs keeps steady-state dissipation under 10 W at 100 A load, while the 80 V Vdss withstands the worst-case input transients of a -48 V telecom plant. The PG-TDSON-8 footprint exposes the drain directly to the PCB copper, enabling robust thermal performance without an external heat sink in well-designed boards. The low Qg keeps the SOA margin wide during inrush, allowing the device to survive a 10 ms short-circuit event with proper gate-current limiting. This combination makes the part a strong alternative to larger D2PAK MOSFETs in space-constrained OR-ing designs.
Recommended
Brushless DC Motor Drive Half-Bridge
In 48 V brushless DC (BLDC) motor drives for e-mobility, robotics, and industrial fans, the ISC024N08NM7ATMA1 forms the switching element of each half-bridge phase. The 24 A Ta-rated current supports fractional-horsepower motors up to 500 W continuous, while the 80 V Vdss tolerates regenerative braking transients on a 48 V bus. OptiMOS 7's low Qg x Rds(on) figure-of-merit reduces switching losses, allowing higher PWM frequencies for smoother torque and quieter operation. The PG-TDSON-8 footprint enables a compact 3-phase inverter footprint under 30 mm x 40 mm. For position-sensorless BLDC, pair the half-bridges with a TLE95613QXXUMA1 motor-driver SBC (also in our Site MPN list) for SPI-controlled FOC.
Recommended
USB-PD 100W Sink Stage
In high-power USB-PD sink designs delivering 100 W at 20 V/5 A, the ISC024N08NM7ATMA1 is used as the protection and load-switch element on the VBUS rail. Its 80 V Vdss provides more than 3x margin above the 20 V PD contract voltage, ensuring robust tolerance to cable transients and ESD events. The 24 A continuous rating easily handles the full 5 A PD current with significant derating, while the small PG-TDSON-8 footprint keeps the PCB area under 25 mm2. The low Rds(on) reduces voltage drop and heat generation, critical for thermally-constrained mobile and docking-station designs. This part is a drop-in fit for USB-PD controllers from Infineon and other vendors.
Recommended
E-Bike / Power-Tool Battery Protection
The ISC024N08NM7ATMA1 fits well as the high-current disconnect switch in 48 V e-bike and high-power cordless tool battery packs. Its 80 V Vdss accommodates fully-charged 13S Li-ion packs (54.6 V max) plus inductive kickback from the motor, while the 24 A Ta rating handles continuous discharge currents up to 1 kW. The low Rds(on) reduces conduction losses during high-current discharge, improving runtime. PG-TDSON-8 surface-mount packaging is mechanically rugged for battery-pack PCB assembly. Pair with a battery-management IC from the Infineon TLE family for cell balancing, over-current, and over-temperature protection.
Recommended
Solar Micro-Inverter / MPPT Stage
In low-voltage solar micro-inverters and MPPT charge controllers, the ISC024N08NM7ATMA1 serves as the high-frequency switching element in the boost or buck stage. Its 80 V Vdss comfortably handles open-circuit voltages of 24 V solar panels (Voc ~36 V) including cold-temperature overshoot. OptiMOS 7's low Qg allows 100 kHz+ switching frequencies that minimize magnetic size in the MPPT inductor. The PG-TDSON-8 footprint with exposed drain pad supports continuous operation at high power without forced air cooling. This drop-in choice simplifies BOM standardization across 24 V, 36 V, and 48 V solar product lines.
Recommended
Recommended Products Summary
Engineering reference data for ISC024N08NM7ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC011N04NM7VATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISC028N03LF2SATMA1 | ISC015N06NM5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 80 V | 40 V | 80 V | 120 V | 30 V | 60 V | 40 V |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Latest OptiMOS 7 technology with 30% lower Rds(on) and 50% lower Qg vs OptiMOS 5 (vs ISC015N06NM5ATMA1)
- Higher Vdss (80 V) provides 30 V margin above 48 V telecom rails (vs ISC011N04NM7VATMA1)
- Higher power dissipation (150 W Tc) supports 1.5 kW per phase (vs ISC037N12NM6ATMA1)
Design Notes
Estimated: at Pd=3 W (Ta=25 C) with a typical PG-TDSON-8 theta-JA of about 50 C/W on a 6 cm2 drain copper area per the Infineon datasheet, the junction temperature rises roughly 150 C above ambient (Tj ~ 175 C at full Ta rating). For continuous operation above 1.5 W, expand the drain copper area to at least 6 cm2, add thermal vias beneath the exposed pad, and consider a topside heat spreader. The 150 W Tc rating assumes the case is held at 25 C by a cold plate or large heatsink.
Keep the gate-drive loop (gate-driver output -> gate pin -> source pin -> driver ground return) under 5 mm total length to minimize parasitic inductance. Place a 10-100 ohm gate-source resistor close to the gate pin to prevent false turn-on from dV/dt coupling. The Source pins (1-3 and 5-7) must all be soldered to a wide copper pour - splitting the source connection across multiple pins reduces package inductance and improves thermal performance. Reference: Infineon OptiMOS 7 application note on PG-TDSON-8 layout best practices.
Do not operate the ISC024N08NM7ATMA1 above 80 V Vds even for microseconds - avalanche breakdown can permanently damage the part. In 48 V telecom designs, add a TVS clamp (e.g., 68 V SMBJ) across drain-source if the bus can see load-dump transients above 80 V. Also avoid continuous operation at the Ta=25 C 24 A rating without verifying the PCB thermal design - the actual continuous current is limited by Tj(max)=175 C and theta-JA of your board. Source: Infineon ISC024N08NM7 datasheet maximum ratings section.
The PG-TDSON-8 land pattern should follow Infineon's recommended footprint with a central thermal pad of approximately 3.5 mm x 2.7 mm, populated with an array of 0.3 mm thermal vias on a 0.6 mm pitch. Vias should be plugged and capped on the bottom side to prevent solder wicking during reflow. Use a stencil aperture reduction of about 80% on the thermal pad to limit solder paste volume and avoid floating the package during reflow. Source: Infineon PG-TDSON-8 land-pattern application note.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free per Infineon OptiMOS 7 datasheet. MSL-1 per JEDEC J-STD-020. Not AEC-Q100 qualified - this is an industrial-grade part.
