ISC045N03L5SATMA1 vs BSZ0901NSIATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC045N03L5SATMA1 BSZ0901NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $0.34
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 BSZ0901NSIATMA1
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 / Trench OptiMOS trench N-channel MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25Β°C 18 A β€”
Continuous Drain Current (ID) at TC=25Β°C 63 A β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mΞ© [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 Β΅A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Total Gate Charge (Qg) 13 nC @ VGS=10 V [DATA_NEEDED: total gate charge Qg]
Input Capacitance (Ciss) 870 pF @ VDS=15 V β€”
Power Dissipation (PD) at TA=25Β°C 2.5 W β€”
Power Dissipation (PD) at TC=25Β°C 30 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C -55 C to +150 C (typical MOSFET range)
RoHS Status Compliant Compliant
Series β€” OptiMOS 25V
FET Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25C β€” 25 A
Continuous Drain Current (ID) at Tc=25C β€” 40 A
Power Dissipation (PD) at Ta=25C β€” 2.1 W
Power Dissipation (PD) at Tc=25C β€” 69 W
Pin Count β€” 8
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Packaging β€” Tape & Reel (ATMA1 suffix = 13-inch reel)

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