ISC056N08NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC056N08NM6ATMA1

ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon

ISC056N08NM6ATMA1 βœ“ Active
Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC056N08NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $3.62
Manufacturer Infineon Technologies β€”
Part Number ISC056N08NM6ATMA1 β€”
Series OptiMOS 6 β€”
Technology N-Channel Trench MOSFET (OptiMOS 6) OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at TA=25Β°C 15.3 A β€”
Continuous Drain Current (ID) at TC=25Β°C 88 A β€”
Power Dissipation (PD) at TA=25Β°C 3 W β€”
Power Dissipation (PD) at TC=25Β°C 100 W β€”
Package PG-TDSON-8 FL (TDSON-8 Flat Lead) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Operating Temperature Range -55Β°C to +175Β°C -55C to +175C (junction)
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 214 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

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