ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon
MPN: ISC056N08NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.42 | $14.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.78 | $780.00 |
ISC056N08NM6ATMA1 Overview
A power MOSFET is a voltage-controlled switch that converts a small gate-drive signal into a large conduction path between drain and source. It sits within the discrete-semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor. The OptiMOS 6 generation advances Infineon's trench MOSFET technology with a finer cell pitch and an improved shield-gate structure, reducing both on-resistance and switching charge for the same silicon area, which translates directly into lower conduction and switching losses in synchronous-rectifier and hot-swap topologies.
Key features include an extremely low on-resistance per area, optimized switching charge (Qg, Qgd) for high-frequency operation, a logic-level compatible gate threshold, and 100 W maximum power dissipation at TC=25°C. The 80 V drain-source rating provides substantial headroom above nominal 48 V telecom rails and 36-48 V battery systems, while the 8x8 mm PG-TDSON-8 FL footprint offers an exposed pad that keeps thermal resistance low enough for high-current designs without an external heatsink.
The architecture combines a high-cell-density OptiMOS 6 trench with a low-inductance lead-frame package; this combination minimizes both conduction losses (low RDS(on)) and switching losses (low Qgd), which is the principal trade-off engineers face when selecting between older OptiMOS 5 and newer OptiMOS 6 parts.
Typical applications include 48 V telecom hot-swap and OR-ing circuits, server DC-DC converter primary-side switches, solar micro-inverters and MPPT stages, battery-management system protection MOSFETs, and high-current buck/boost converters in industrial power tools.
When designing with this device, ensure the gate-drive voltage fully enhances the channel (VGS=10 V recommended) and minimize parasitic source-inductance with Kelvin-source layout where possible; the FL (flat-lead) version is preferred over the standard TDSON-8 leadform when target designs must meet tight thermal budgets.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 6 family, and practical design notes that go beyond what is printed in the manufacturer datasheet.
Drop-in alternatives for ISC056N08NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC056N08NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, MSL Level, Product Family.
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View Datasheet →ISC056N08NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | ISC056N08NM6ATMA1 |
| Series | OptiMOS 6 |
| Technology | N-Channel Trench MOSFET (OptiMOS 6) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 15.3 A |
| Continuous Drain Current (ID) at TC=25°C | 88 A |
| Power Dissipation (PD) at TA=25°C | 3 W |
| Power Dissipation (PD) at TC=25°C | 100 W |
| Package | PG-TDSON-8 FL (TDSON-8 Flat Lead) |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| Operating Temperature Range | -55°C to +175°C |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
ISC056N08NM6ATMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input |
| Pin 2 | S — Source (Kelvin sense) |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | D — Drain |
ISC056N08NM6ATMA1 Safe Operating Area (estimated from datasheet DC SOA curve)
Typical Applications
ISC056N08NM6ATMA1 is suitable for 7 applications: 48V Telecom Hot-Swap & OR-ing, Server DC-DC Converter Primary Switch, Solar Micro-Inverter MPPT Stage, Battery Management System (BMS) Protection, Industrial Power Tools - High-Current BLDC Drive, USB-PD / Type-C EPR High-Voltage Buck, Automotive 48V Mild-Hybrid Load Switch.
48V Telecom Hot-Swap & OR-ing
The ISC056N08NM6ATMA1 is a strong fit for 48 V telecom hot-swap and OR-ing power stages. The 80 V VDS rating delivers 32 V of headroom above the nominal 48 V rail and easily handles the 60 V transient per ETSI EN 300 132-2. Its 88 A TC-rated drain current covers worst-case inrush when a discharged board capacitance is plugged into a live backplane, while the OptiMOS 6 silicon's low Qgd keeps switching losses low at the 100-300 kHz switching frequencies common in these designs. Compared with older OptiMOS 5 parts, the >24% lower RDS(on) directly cuts conduction loss in the steady-state OR-ing path, raising overall system efficiency.
Recommended
Server DC-DC Converter Primary Switch
Inside 48 V-to-point-of-load DC-DC converters used in hyperscale servers, the ISC056N08NM6ATMA1 acts as the primary-side high-side or low-side switch. Its PG-TDSON-8 FL exposed pad holds junction temperature within limits at full 88 A TC load, while the low RDS(on) of OptiMOS 6 silicon reduces I²R conduction loss during the heavy load steps that AI accelerator workloads create. The 80 V VDS rating comfortably exceeds the 48-54 V input range with margin for transient ringing, and the low Qgd enables sub-50 ns switching transitions that allow >500 kHz switching frequency for smaller magnetics.
Recommended
Solar Micro-Inverter MPPT Stage
In solar micro-inverters and string inverters, the ISC056N08NM6ATMA1 can serve as the MPPT buck or boost switch on the PV-input side. The 80 V VDS covers the maximum-power-point voltage of two stacked 24 V panels in series, and the 88 A TC current rating handles the high inductor ripple currents typical of MPPT operation. OptiMOS 6's >24% lower RDS(on) versus prior generations lifts peak inverter efficiency by 0.3-0.5%, which is meaningful for solar energy harvest over a 25-year panel lifetime. The FL leadform improves thermal cycling reliability - critical for outdoor solar installations that see large daily temperature swings.
Recommended
Battery Management System (BMS) Protection
For 36-48 V battery packs in e-mobility, light electric vehicles, and stationary energy storage, the ISC056N08NM6ATMA1 functions as a high-side or low-side protection MOSFET. The 80 V VDS comfortably exceeds the maximum charge voltage of typical 14s Li-ion packs (58.8 V) and 16s LiFePO4 packs (57.6 V) with margin for inductive transients. Its 88 A TC continuous current supports the high discharge currents demanded by traction inverters, and the low RDS(on) reduces heat dissipation in the protection path - important for battery thermal budgets. The FL leadform variant's superior solder-joint reliability reduces field-failure risk in vibration-prone applications.
Recommended
Industrial Power Tools - High-Current BLDC Drive
Inside cordless power tools running 36 V or 48 V battery platforms, the ISC056N08NM6ATMA1 can be used as one of three half-bridge switches for a brushless-DC motor drive. The 80 V VDS rating absorbs the back-EMF spikes of high-KV BLDC motors at full RPM, and the 88 A TC current rating supports the 30-50 A peak currents that cordless drills and impact wrenches demand during stall. The OptiMOS 6 silicon's low Qgd reduces switching losses at the 20-50 kHz PWM frequencies that BLDC drives typically use, while the FL leadform's thermal pad keeps junction temperature within limits during prolonged stall events.
Recommended
USB-PD / Type-C EPR High-Voltage Buck
For USB-PD Extended Power Range (EPR) designs operating up to 48 V input, the ISC056N08NM6ATMA1 serves as the high-side buck switch in the front-end stage. The 80 V VDS rating easily handles the 48 V EPR maximum with 32 V of transient margin, while the 88 A TC current capacity supports the full 240 W EPR power level. The PG-TDSON-8 FL package fits the dense form factor that USB-PD adapters demand, and OptiMOS 6's low Qgd enables >300 kHz switching for small magnetics - critical for slim travel-adapter designs.
Recommended
Automotive 48V Mild-Hybrid Load Switch
Although the standard ISC056N08NM6ATMA1 is not AEC-Q100 qualified, the same die in the PG-TDSON-8 FL package is used as the basis for the Infineon IAUC-prefixed automotive-grade OptiMOS 6 family. Designers can drop the ISC056N08NM6ATMA1 into 48 V mild-hybrid load-switch prototypes during development, then migrate to the IAUC-qualified equivalent for production. The 80 V VDS handles the 36-54 V 48 V mild-hybrid bus per LV148 with substantial transient margin, and the 88 A TC current rating covers the peak loads of electric power steering, regenerative braking, and active suspension actuators.
Recommended
Recommended Products Summary
Engineering reference data for ISC056N08NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC151N08NM6ATMA1 | ISC011N04NM7VATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5ATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 120 V | 60 V | 30 V |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- OptiMOS 6 silicon delivers >24% lower RDS(on) vs OptiMOS 5 (vs ISC015N06NM5ATMA1)
- Flat-Lead (FL) leadform improves solder reliability (vs Standard TDSON-8 (non-FL) variants)
- 80 V VDS provides ample margin for 48 V telecom/battery rails (vs ISC015N06NM5ATMA1 (60 V))
Design Notes
Estimated: at TA=25°C and full 100 W TC=25°C power dissipation, the junction temperature rise for ISC056N08NM6ATMA1 depends on the thermal resistance from junction to ambient. Designers should attach the PG-TDSON-8 FL exposed pad to a minimum 1 square-inch of 2 oz copper pour on both top and bottom PCB layers to achieve thermal resistance comparable to the 100 W TC rating. Without a substantial copper pour, the part will thermally limit well below 88 A. For continuous operation near 100 W, an external heatsink or thermal via array is mandatory.
Lay out the gate-drive loop (gate resistor + driver IC + source-return path) as small as physically possible - ideally with the gate resistor placed within 5 mm of the gate pin. Use a Kelvin-source connection (separate source-sense trace from the high-current source pins) when driving the MOSFET at >100 kHz with high di/dt, as this eliminates the source-inductance-induced gate-drive slowdown that increases switching loss. The PG-TDSON-8 FL exposed pad must be soldered to a continuous copper pour for both electrical (source) and thermal (heat-spreading) reasons.
Do not drive the ISC056N08NM6ATMA1 gate below the datasheet-specified VGS(th) minimum - typical OptiMOS 6 parts require VGS=10 V for full enhancement and lowest RDS(on). Driving with only 4.5 V (logic-level) may leave the MOSFET in the linear region, causing high conduction loss and possible thermal runaway. Also ensure VGS never exceeds the +/-20 V absolute-maximum rating - gate ESD is a real field-failure mode for MOSFETs in production. Add a 10 kΩ gate-to-source pull-down resistor to keep the part off during controller power-up.
Compliance Information
RoHS and REACH compliant per Infineon product page. Standard industrial grade (not AEC-Q100 qualified) - choose IAUC-prefixed variants for automotive applications. Lead-free reflow profile per JEDEC J-STD-020.
