ISC0703NLSATMA1 vs ISC0802NLSATMA1 Comparison
Detailed side-by-side comparison of ISC0703NLSATMA1 by Infineon and ISC0802NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0802NLSATMA1
ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon
ISC0802NLSATMA1 β ActiveSpecification Comparison
| Parameter | ISC0703NLSATMA1 | ISC0802NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $1.80 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A | β |
| Continuous Drain Current (ID) at Tc=25C | 57 A | β |
| Power Dissipation (PD) at Ta=25C | 3 W | β |
| Power Dissipation (PD) at Tc=25C | 44 W | β |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 (Power MOSFET) |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C |
| Standard Package Quantity | 5,000 (reel) | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | Compliant |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Part Number | β | ISC0802NLSATMA1 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 150 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| RDS(on) max at VGS=10V | β | 3.6 mOhm |
| Power Dissipation (Pd) at Ta | β | 2.5 W |
| Power Dissipation (Pd) at Tc | β | 125 W |