ISC0805NLSATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC0805NLSATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 5 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 30 V
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] —
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Package PG-TDSON-8-46 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +150 °C -55C to +150C (Tj)
RoHS Status Compliant —
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Halogen Free — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Datasheets & Resources

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