BSC0902NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
MPN: BSC0902NSATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for BSC0902NSATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0901NSATMA1
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✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
BSC052N08NS5ATMA1
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View Datasheet →BSC0902NSATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Ta) | 24 A |
| Pulsed Drain Current (IDM, Tc) | 100 A |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 48 W |
| Operating Temperature Range | -55C to +150C (Tj) |
| Package | PG-TDSON-8-6 (SuperSO8) |
| Mounting Type | Surface Mount |
| Qualification | JEDEC qualified for target applications |
| RoHS Compliance | Compliant (Pb-free lead plating) |
| Halogen-Free | Yes, per IEC 61249-2-21 |
| Avalanche Rated | Yes (100% avalanche tested) |
BSC0902NSATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | D — Drain (connected to exposed pad) |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Safe Operating Area (DC)
Typical Applications
BSC0902NSATMA1 is suitable for 7 applications: High-Frequency Synchronous Buck Converter (Server VRM), Point-of-Load Regulator in Datacom Equipment, CPU/GPU Core Rail Power Stage, OR-ing FET in Redundant Power Architectures, High-Current Hot-Swap Circuit, Motor Drive and PWM Load Switching, Battery Management and Protection FET.
High-Frequency Synchronous Buck Converter (Server VRM)
The BSC0902NSATMA1 is well-suited as both high-side and low-side FET in 12V-input synchronous buck converters targeting server and telecom VRM rails. Its 30V VDS rating provides ample margin above 12V nominal and typical 18V transient overshoot, while the low Qg and Qgd at 4.5V VGS enable 500 kHz to 1 MHz switching without incurring excessive driver losses. In a typical 25A POL design, placing BSC0902NSATMA1 as the low-side FET and a matched 30V companion as the high-side reduces total switching loss by ~25% versus prior-generation 30V MOSFETs, improving light-load efficiency by 1-2 percentage points. Compared with using a single 60V-rated part, the 30V OptiMOS cell geometry halves output capacitance, reducing dead-time body-diode conduction and improving efficiency at full load.
Recommended
Point-of-Load Regulator in Datacom Equipment
In datacom switch and router point-of-load (POL) applications, the BSC0902NSATMA1's combination of low RDS(on) at 4.5V VGS and small PG-TDSON-8-6 footprint enables high-density 1V to 5V rail conversion directly beneath ASICs and FPGAs. The 24A continuous rating supports typical 15-20A POL loads with adequate thermal margin when the exposed pad is tied to 2 oz copper on inner PCB layers. Compared to older D2PAK 30V MOSFETs, the SuperSO8 package reduces board area by ~70% while maintaining comparable thermal performance through its low-RthJC exposed pad. Optimized for use with PMBus-controlled digital controllers, the BSC0902NSATMA1 enables high step-ratio conversion efficiency required for the 12V intermediate bus architecture prevalent in hyperscale datacom.
Recommended
CPU/GPU Core Rail Power Stage
BSC0902NSATMA1 is frequently deployed in multi-phase VRM power stages driving CPU and GPU core rails in server and workstation platforms. Its low gate charge at VGS=4.5V allows direct interfacing with driver ICs that supply only 4.5V gate drive, simplifying the power stage. The 100A pulsed drain current capability provides substantial margin during transient events, while 100% avalanche testing per the Infineon datasheet ensures robustness under abnormal operating conditions. In a 6-phase VRM, using BSC0902NSATMA1 with Infineon's driver ICs achieves per-phase switching frequencies above 600 kHz, enabling a 6-phase design to deliver 150A+ continuous current with sub-30 mOhm effective per-rail impedance. The exposed SuperSO8 pad supports direct PCB heatsinking without external heatsinks.
Recommended
OR-ing FET in Redundant Power Architectures
In -48V telecom and 12V server redundant power architectures, the BSC0902NSATMA1 functions as a high-current OR-ing FET, leveraging its 30V VDS rating for 12V bus use (with proper derating) and low RDS(on) to minimize conduction loss during parallel power-supply operation. The 100% avalanche rating provides reliability under input transient and reverse-current events common in hot-swap and redundant supply topologies. Combined with a controller IC that detects reverse current, the BSC0902NSATMA1 enables fast (<10 us) disconnect during fault conditions, preventing bus voltage collapse. Compared to using a Schottky diode for OR-ing, the MOSFET OR-ing approach reduces power loss by 60-80%, critical for high-current redundant rails where dissipation directly impacts system efficiency.
Recommended
High-Current Hot-Swap Circuit
BSC0902NSATMA1's combination of 30V VDS rating, 100A pulsed current capability, and 100% avalanche testing makes it suitable as the pass FET in high-current 12V hot-swap circuits for plug-in server blades and telecom line cards. The low RDS(on) at VGS=10V minimizes steady-state dissipation while the device's safe operating area supports inrush current limiting during card insertion. Paired with a hot-swap controller that monitors drain current and board voltage, the BSC0902NSATMA1 enables 20-30A continuous pass-through with programmable fault response. Compared to using multiple smaller MOSFETs in parallel, a single BSC0902NSATMA1 reduces PCB footprint, simplifies gate-drive design, and avoids the current-sharing challenges that arise with paralleled FETs in hot-swap applications.
Recommended
Motor Drive and PWM Load Switching
The BSC0902NSATMA1 can serve as the low-side switch in 12-24V brushless DC motor drive stages, solenoid drivers, and PWM load-switching applications. Its 30V VDS rating, low gate charge, and 24A continuous current support industrial motor control subsystems driving fans, pumps, and small actuators. The fast switching transition times enable 25 kHz+ PWM operation without excessive switching loss, while the avalanche rating provides robustness under inductive kickback events. With proper gate-drive design and an external flyback/clamping diode where needed, the BSC0902NSATMA1 achieves reliable PWM switching at duty cycles from 0% to 100% in H-bridge motor topologies, supporting BLDC and stepper motor control designs in industrial automation.
Recommended
Battery Management and Protection FET
In 12V lead-acid and multi-cell Li-ion battery management systems, the BSC0902NSATMA1 functions as the protection or load-disconnect FET due to its low RDS(on) at VGS=4.5V, allowing direct logic-level drive from the battery management MCU without a gate-driver stage. The 30V rating handles typical 12V battery transients, while the 100% avalanche rating provides robustness under reverse-battery and load-dump fault conditions. Combined with a battery monitor IC, the BSC0902NSATMA1 enables undervoltage/overcurrent protection with minimal conduction loss, critical for extending battery runtime in portable and backup applications. Compared with using a low-current load switch, the MOSFET-based disconnect supports 20A+ continuous loads while maintaining sub-50 mOhm total path resistance.
Recommended
Recommended Products Summary
Engineering reference data for BSC0902NSATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSATMA1 | BSC0906NSATMA1 | BSC0911NSATMA1 | BSC052N08NS5ATMA1 | BSC016N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8-6 (SuperSO8) - same | PG-TDSON-8-6 (SuperSO8) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 80 V | 60 V |
| Continuous Drain Current (TA=25C) | 24 A | Higher (lower RDS(on) class) | Lower (higher RDS(on) class) | Higher (lower RDS(on) class) | Different (80V rating) | Different (60V rating) |
| Pulsed Drain Current (TC=25C) | 100 A | Comparable | Comparable | Comparable | Different (80V class) | Different (60V class) |
| Technology Family | OptiMOS 30V | OptiMOS 30V | OptiMOS 30V | OptiMOS 30V | OptiMOS 80V | OptiMOS 60V |
| RoHS / Halogen-Free | Yes / Yes (IEC 61249-2-21) | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
| Avalanche Tested | Yes (100%) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower gate charge than higher-RDS(on) OptiMOS 30V family members (vs BSC0906NSATMA1)
- Higher current rating than smaller 30V OptiMOS parts in same package (vs BSC0906NSATMA1)
- JEDEC-qualified and 100% avalanche-tested for target applications (vs BSC052N08NS5ATMA1 (80V OptiMOS))
Design Notes
The PG-TDSON-8-6 package achieves low thermal resistance primarily through the drain-connected exposed pad on the underside of the part. To realize the datasheet's 2.5W TA rating in practice, stitch the exposed pad to at least 1 sq inch of 1oz copper on the top layer plus a 4-6 thermal via array (0.3mm drill, 0.6mm pitch) to inner-layer copper pours. Estimated: with 1 sq inch copper and 2oz inner-layer copper, thermal resistance RthJA approaches 50 C/W; at 2.5W dissipation the junction temperature rises ~125C above ambient, so derate accordingly or reduce RDS(on) loss with a lower-RDS(on) companion part.
Minimize the high-side gate-drive loop by placing the gate-driver IC within 5mm of the FET's gate and source pins. Use a tight gate-trace width of 0.2-0.3mm with a directly-adjacent ground-return trace to limit parasitic loop inductance. For the high-current power loop (VIN to high-side drain, high-side source to low-side drain, low-side source to PGND), use wide copper pours on multiple layers stitched with vias every 2-3mm. Per Infineon's OptiMOS application notes, this layout discipline is the single biggest determinant of achievable switching loss and EMI performance in synchronous buck designs.
Avoid exceeding the datasheet's VGS maximum rating of +/-20V by ensuring the gate-drive voltage is clamped; using a 12V gate drive without a Zener clamp on transient ringing is a common cause of FET failure. Do not assume the 24A continuous rating applies in your board layout - that figure is based on TA=25C with specific PCB copper area assumptions. Always derate by 50-70% for realistic ambient temperatures of 50-70C in enclosed server/telecom environments.
In high-frequency switching applications (500 kHz+), the BSC0902NSATMA1's switching transitions can generate significant dv/dt-induced ringing on the gate and source-sense traces. Add a small gate-source resistor (10-100 kOhm) to prevent spurious turn-on from Miller coupling, and place a 1-10 nF ceramic bypass capacitor between the gate driver supply and the FET's source-sense pin. Use Kelvin-source connection on the gate-driver return path to avoid ground-bounce-induced false triggering at high di/dt.
Compliance Information
RoHS compliant with Pb-free lead plating per Infineon datasheet. Halogen-free per IEC 61249-2-21. JEDEC qualified for target applications. Not AEC-Q100 qualified - this is a non-automotive-grade MOSFET.
