ISK057N04LM6ATSA1 vs BSC028N06NSTATMA1 Comparison
Detailed side-by-side comparison of ISK057N04LM6ATSA1 by Infineon and BSC028N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISK057N04LM6ATSA1
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
ISK057N04LM6ATSA1 β ActiveInfineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β ActiveSpecification Comparison
| Parameter | ISK057N04LM6ATSA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.40 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25C | 15 A | β |
| Continuous Drain Current (ID) at Tc=25C | 64 A | β |
| Power Dissipation (PD) at Ta | 2.1 W | β |
| Power Dissipation (PD) at Tc | 39.1 W | β |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | β |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | β |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | β |
| Input Capacitance (Ciss) | 870 pF | β |
| Output Capacitance (Coss) | 290 pF | β |
| Reverse Transfer Capacitance (Crss) | 21 pF | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-VSON-6-1 (PQFN 2x2 mm) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 6 Trench | MOSFET N-Channel (OptiMOS 5) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Part Number Base | β | BSC028N06NS |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V to 3.5 V |
| Total Gate Charge Qg | β | 37 nC @ VGS=10V |
| Input Capacitance Ciss | β | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | β | 825 pF |
| Reverse Transfer Capacitance Crss | β | 56 pF |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 100 W |
| Operating Junction Temperature | β | -55C to +175C |
| Halogen-Free | β | Yes |
| MSL Level | β | 1 |
| AEC-Q101 Automotive Qualified | β | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |