ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
MPN: ISK057N04LM6ATSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.67 | $0.67 |
| 10 | $0.55 | $5.50 |
| 100 | $0.45 | $45.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.34 | $340.00 |
| 3,000 | $0.3 | $900.00 |
Drop-in alternatives for ISK057N04LM6ATSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISK057N04LM6ATLA1
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✅ Drop-In📋 Reference alternative (not in catalog)
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View Datasheet →ISK057N04LM6ATSA1 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | 15 A |
| Continuous Drain Current (ID) at Tc=25C | 64 A |
| Power Dissipation (PD) at Ta | 2.1 W |
| Power Dissipation (PD) at Tc | 39.1 W |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | 12 nC |
| Input Capacitance (Ciss) | 870 pF |
| Output Capacitance (Coss) | 290 pF |
| Reverse Transfer Capacitance (Crss) | 21 pF |
| Operating Temperature Range | -55C to +150C |
| Package | PG-VSON-6-1 (PQFN 2x2 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Technology | OptiMOS 6 Trench |
ISK057N04LM6ATSA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input (VGS) |
| Pin 2 | S — Source - power return |
| Pin 3 | S — Source - power return |
| Pin 4 | S — Source - power return |
| Pin 5 | D — Drain - power input (via exposed pad) |
| Pin 6 | S — Source - power return |
Safe Operating Area (DC)
Typical Applications
ISK057N04LM6ATSA1 is suitable for 6 applications: Wireless Charging Transmitter Half-Bridge, Synchronous Buck DC-DC Converter (12V to 3.3V/5V), USB Power Delivery (PD) Load Switch, Battery Management System (BMS) Protection FET, BLDC Motor Drive Half-Bridge, IoT Wearable Point-of-Load Regulator.
Wireless Charging Transmitter Half-Bridge
The ISK057N04LM6ATSA1's 8.3 mOhm RDS(on) at 4.5V gate drive and 12nC total gate charge make it ideal as the synchronous low-side FET in Qi/MPT wireless charging transmitter half-bridges. Its PQFN 2x2 footprint fits the tight PCB area under the charging coil where space is at a premium. The 40V VDS rating provides ample margin for 19V input adapters with inductive ringing. Infineon's OptiMOS 6 trench technology reduces switching losses by approximately 30% versus prior OptiMOS 5 generation, enabling higher coil currents and faster charge times. Pair this MOSFET with a half-bridge gate driver such as 2ED2106S06FXUMA1 from the Site MPN list to complete the power stage.
Recommended
Synchronous Buck DC-DC Converter (12V to 3.3V/5V)
In a 12V-input synchronous buck converter delivering 5-10A, the ISK057N04LM6ATSA1 serves as either the control FET (high-side) or synchronous rectifier (low-side). Its 40V VDS rating comfortably handles the 12V nominal plus transient spikes, while the 8.3 mOhm RDS(on) at 4.5V VGS delivers >93% efficiency at full load. The 12nC Qg allows switching frequencies up to 1 MHz without excessive drive losses, enabling compact inductor selection. For multi-rail POL designs this part fits alongside an Infineon buck controller such as TLE42744DV50ATMA1 from the Site MPN list.
Recommended
USB Power Delivery (PD) Load Switch
USB-PD 3.1 applications demand an N-channel MOSFET capable of carrying 5A-20V (100W) with minimal voltage drop. The ISK057N04LM6ATSA1 handles the VBUS protection switch function with its 15A Ta rating (more than enough for 100W EPR) and 8.3 mOhm RDS(on). At 5A the conduction loss is only 0.21W, allowing operation without a heatsink. The 40V VDS rating exceeds the 20V PD specification with margin for inductive transients. Its small PQFN 2x2 footprint fits the compact USB-C connector PCB typical of laptop docking stations.
Recommended
Battery Management System (BMS) Protection FET
In 1S-3S lithium-ion battery packs the ISK057N04LM6ATSA1 acts as the discharge or charge protection MOSFET, providing over-current cutoff and reverse-polarity protection. Its 40V VDS easily handles the maximum pack voltage plus inductive ringing, and 64A continuous rating covers the typical 10A-30A discharge currents of laptops and power tools. The 8.3 mOhm RDS(on) at 4.5V keeps voltage drop below 0.25V at 30A. Combined with a battery monitor IC such as the TLE9180D31QKXUMA1 from the Site MPN list, it forms a complete BMS protection stage.
Recommended
BLDC Motor Drive Half-Bridge
Small brushless DC motor drives for drones, fans, and pumps use the ISK057N04LM6ATSA1 in a 3-phase half-bridge inverter topology. With 64A peak current capability (Tc) the device supports motors up to several hundred watts. Its 12nC Qg enables 50kHz PWM switching for smooth torque control with low acoustic noise, while the 40V VDS handles 12S LiPo (50.4V fully charged) with external TVS clamping or a higher-VDS variant. Pair this MOSFET with a 3-phase gate driver such as 6EDL04N02PRXUMA1 from the Site MPN list.
Recommended
IoT Wearable Point-of-Load Regulator
Compact IoT wearables and fitness trackers require sub-1 cubic-inch power supplies that step down from a Li-ion battery (4.2V max) to 1.8V/3.3V rails for SoCs and sensors. The ISK057N04LM6ATSA1 fits the synchronous rectifier role in this miniature buck converter, where its PQFN 2x2 (4 mm²) footprint leaves more room for battery and sensor placement. At 1A load its conduction loss is only 8.3mW, contributing less than 1% efficiency loss to the overall system. The 40V rating is over-specified but harmless for sub-5V rails, providing robustness against USB hot-plug transients.
Recommended
Recommended Products Summary
Engineering reference data for ISK057N04LM6ATSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISK057N04LM6ATLA1 | IQE020N04LM6CGATMA1 | ISZ019N03L5SATMA1 | BSC028N06NSTATMA1 | NTMFS5C430N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-VSON-6-1 (PQFN 2x2) | PG-VSON-6-1 (PQFN 2x2) - same | PG-VSON-6-1 (PQFN 2x2) - same | PG-VSON-6-1 (PQFN 2x2) - same | PG-VSON-6-1 (PQFN 2x2) - same | PQFN-6 (2x2) - same |
| VDS Max | 40 V | 40 V | 40 V | 30 V | 60 V | 40 V |
| RDS(on) at 4.5V VGS | 8.3 mOhm | 8.3 mOhm | ~2.0 mOhm (lower) | ~1.9 mOhm (lower) | ~2.8 mOhm (lower) | ~4.3 mOhm (lower) |
| Continuous ID at Tc | 64 A | 64 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge Qg | 12 nC | 12 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 6 Trench | OptiMOS 6 Trench | OptiMOS 6 Trench | OptiMOS 5/6 Trench | OptiMOS Trench | onsemi Trench |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Compact PQFN 2x2 footprint with 40V/64A capability (vs DPAK-packaged 40V MOSFETs)
- OptiMOS 6 latest trench technology (vs Previous-gen OptiMOS 5 devices)
- Wide VDS safety margin for 12V/24V rails (vs 30V-class PQFN 2x2 MOSFETs)
Design Notes
Estimated: at 30A continuous in a PQFN 2x2 with 4-layer 1-oz PCB and 25C ambient, the junction temperature rise is approximately 75C (P=I²R=30²×0.0083=7.5W; θJA ≈ 10 C/W). To sustain 30A without exceeding 100C Tj, derate to approximately 25A in a 70C ambient. Always solder the exposed drain pad to a minimum of 25 mm² of copper on top and bottom layers for adequate heat spreading.
Place the gate-drive loop (gate-driver output to gate to source-return) as physically small as possible - typically under 5 mm of total trace length. Use a 10 ohm gate-source resistor (Rgs) close to the gate pin to prevent parasitic turn-on during high dv/dt switching events. The exposed drain pad must have at least 4 thermal vias (0.3 mm diameter) to inner copper planes for heat extraction.
Do not exceed VGS of ±20V absolute maximum - gate oxide damage is non-recoverable. Avoid operating VGS between 0V and the gate threshold (1.7V-2.5V) for extended periods, as the device operates in linear region and dissipates excessive power. In half-bridge topologies ensure dead-time is at least 20 ns to prevent shoot-through but no more than 100 ns to avoid body-diode conduction losses.
Compliance Information
RoHS and REACH compliant per Infineon product environmental data. Not AEC-Q100 qualified - this part targets industrial and consumer applications, not automotive. For automotive designs choose an AEC-Q100 qualified variant from the Infineon OptiMOS 6 portfolio.
