ISZ028N03LF2SATMA1 vs ISZ019N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISZ028N03LF2SATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveInfineon
ISZ019N03L5SATMA1 - 30V 1.9mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ028N03LF2SATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.48 |
| FET Type | N-Channel | β |
| Technology | StrongIRFET 2 (Trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | β |
| Continuous Drain Current (ID) at Ta | 22 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | 2 V (typical) |
| On-Resistance (RDS(on)) max | 2.8 mΞ© | β |
| Power Dissipation (Tc) | 83 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSDSON-8 FL (FL = flat lead) | PG-TSDSON-8-FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction, typical) | -55C to +175C (TJ max) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 44 nC at VGS=10V |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 22 A |
| Continuous Drain Current (ID) at TC=25C | β | 40 A |
| RDS(on) at VGS=10V | β | 1.9 mΞ© (typical, ID=20A) |
| Gate-Source Voltage Rating (VGS) | β | Β±20 V |
| Input Capacitance (Ciss) | β | 2800 pF at VDS=15V |
| RoHS / REACH | β | Compliant |
| Avalanche Rated | β | Yes |
| RG-tested | β | 100% |