ISZ028N03LF2SATMA1 vs ISZ019N03L5SATMA1 Сравнение
Подробное сравнение бок о бок ISZ028N03LF2SATMA1 от Infineon и ISZ019N03L5SATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ АктивенInfineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ АктивенСравнение характеристик
| Параметр | ISZ028N03LF2SATMA1 | ISZ019N03L5SATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,49 | $0,48 |
| FET Type | N-Channel | — |
| Technology | StrongIRFET 2 (Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | 2 V (typical) |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Корпус | PG-TSDSON-8 FL (FL = flat lead) | PG-TSDSON-8-FL (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (junction, typical) | -55C to +175C (TJ max) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Статус RoHS | Compliant | — |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | 44 nC at VGS=10V |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (<= 40V) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 22 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| RDS(on) at VGS=10V | — | 1.9 mΩ (typical, ID=20A) |
| Gate-Source Voltage Rating (VGS) | — | ±20 V |
| Input Capacitance (Ciss) | — | 2800 pF at VDS=15V |
| RoHS / REACH | — | Compliant |
| Avalanche Rated | — | Yes |
| RG-tested | — | 100% |