ISZ056N03LF2SATMA1 vs BSC0921NDIATMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ Active
Specification Comparison
| Parameter | ISZ056N03LF2SATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | StrongIRFET 2 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 31 A (per channel, package-limited) |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TISON-8 (8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Technology | — | OptiMOS 25V (N-channel) |
| Configuration | — | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Operating Temperature | — | -55C to +150C (junction) |
| MSL Level | — | 1 (per Infineon OptiMOS family) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |