ISZ056N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ056N03LF2SATMA1 by Infineon and ISZ033N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveInfineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ056N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Series | StrongIRFET 2 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 16 A | β |
| Continuous Drain Current (ID) at Tc | 72 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | 2.35 V max @ 30 uA |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | β |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 52 W | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TSDSON-8 FL (8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 20 A |
| Continuous Drain Current (ID) at TC=25C | β | 109 A |
| Power Dissipation (PD) at TA=25C | β | 3 W |
| Power Dissipation (PD) at TC=25C | β | 71 W |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Operating Junction Temperature | β | -55 C to +175 C |
| Technology | β | OptiMOS 5 |