ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: ISZ033N03LF2SATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.68 | $680.00 |
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View Datasheet →ISZ033N03LF2SATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A |
| Continuous Drain Current (ID) at TC=25C | 109 A |
| Power Dissipation (PD) at TA=25C | 3 W |
| Power Dissipation (PD) at TC=25C | 71 W |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TSDSON-8 FL (8-pin) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 |
| RoHS Status | Compliant |
ISZ033N03LF2SATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side thermal path) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input (10V VGS typical for full enhancement) |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Drain — Drain connection (top pad bonded, thermal relief) |
Safe Operating Area - ISZ033N03LF2SATMA1
Typical Applications
ISZ033N03LF2SATMA1 is suitable for 7 applications: Synchronous Buck Converter for 12V Bus, OR-ing FET for Redundant 12V/24V Distribution, USB-PD Load Switch and Type-C VBUS Protection, Cordless Power Tool Battery Protection, Motor Drive Half-Bridge (12V/24V DC Motors), Secondary-Side Synchronous Rectification in SMPS, Hot-Swap / Inrush Current Limiter for 12V Buses.
Synchronous Buck Converter for 12V Bus
The ISZ033N03LF2SATMA1 is ideal as the low-side synchronous rectifier in a 12 V buck converter. Its 30 V VDS provides comfortable derating headroom on a 12 V rail with switching transients, while the 109 A TC current rating handles multi-hundred-watt power levels. The OptiMOS 5 ultra-low Qg minimizes switching loss at 300-500 kHz operation, and the PG-TSDSON-8 FL top-side cooling pad pulls heat directly into a top-side heatsink or PCB copper pour. Compared to older 30 V MOSFETs, the figure-of-merit is roughly 30% lower, directly translating to higher converter efficiency.
Recommended
OR-ing FET for Redundant 12V/24V Distribution
In redundant telecom or server power architectures, the ISZ033N03LF2SATMA1 serves as an OR-ing FET between two 12 V or 24 V power sources. Its 30 V VDS comfortably handles the highest common bus voltage with margin, and the 109 A continuous rating supports full 1.3 kW-plus redundant power feed. The very low RDS(on) at 10 V VGS minimizes conduction loss in the always-on OR-ing path, while the OptiMOS 5 fast body-diode reverse recovery enables clean hot-swap transitions. A gate driver such as IRS2004STRPBF or IRS2181STRPBF handles the miller plateau and turn-off speeds needed for fast disconnect during fault conditions.
Recommended
USB-PD Load Switch and Type-C VBUS Protection
USB-Power-Delivery and Type-C VBUS paths require a 20 V-rated load switch that is fully on at 5 V gate drive. The ISZ033N03LF2SATMA1's 30 V VDS rating handles 20 V PD voltage steps, while the sub-3 W TA dissipation stays within USB Type-C connector thermal limits for typical 5 A current levels. The small PG-TSDSON-8 FL footprint fits behind the connector on space-constrained PCB designs, and the top-side cooling pad can dump heat to an inner copper layer. Paired with a Type-C controller, this enables safe and efficient VBUS gating and fault isolation.
Recommended
Cordless Power Tool Battery Protection
Battery Management Systems (BMS) in 18 V / 20 V cordless tools need a robust N-channel MOSFET for discharge and short-circuit protection. The ISZ033N03LF2SATMA1 with 30 V VDS handles a fully-charged 20 V Li-ion pack with margin, while the 109 A TC rating supports peak motor currents well above 50 A during stall events. The OptiMOS 5 process delivers an extremely low RDS(on) that reduces conduction loss during heavy discharge, extending runtime per charge cycle. The PG-TSDSON-8 FL flip-chip package provides the ruggedness needed for high-vibration tool environments.
Recommended
Motor Drive Half-Bridge (12V/24V DC Motors)
In brushed DC and small BLDC motor drive half-bridges operating from 12 V or 24 V batteries, the ISZ033N03LF2SATMA1 fills both high-side and low-side switch positions. The 30 V VDS rating covers 24 V lead-acid and 21 V Li-ion chemistries with margin for back-EMF spikes; the 109 A continuous TC rating supports motor currents in the 30-50 A range. The fast switching capability enables PWM frequencies up to 50 kHz for smooth torque control, while the low gate charge reduces driver power dissipation. Pair with IRS2104STRPBF or IR2104STRPBF half-bridge gate drivers for complete control.
Recommended
Secondary-Side Synchronous Rectification in SMPS
The ISZ033N03LF2SATMA1 is an excellent synchronous rectifier on the secondary side of an isolated DC-DC converter or flyback SMPS operating on a 5 V or 12 V output rail. The 30 V VDS provides significant margin over the secondary-side rectified voltage, and the sub-milliohm-class RDS(on) reduces secondary-side conduction loss, often replacing a Schottky diode for higher efficiency. The very low Qrr body diode minimizes dead-time losses at higher switching frequencies, making it a strong choice for 500 kHz+ LLC or active-clamp designs. The PG-TSDSON-8 FL's top-side pad can dissipate the secondary-side conduction heat directly upward.
Recommended
Hot-Swap / Inrush Current Limiter for 12V Buses
In telecom and server 12 V distribution, hot-swap controllers need an N-channel MOSFET that can survive inrush currents during board insertion. The ISZ033N03LF2SATMA1's 30 V VDS and 109 A TC rating handle the peak inrush surge of bulk capacitors charging, while the PG-TSDSON-8 FL package provides the thermal mass and top-side pad to dissipate sustained fault currents. The controlled RDS(on) and SOA characteristics allow the controller to slowly ramp VGS to limit di/dt, while the fast body diode provides a path for stored inductor energy during abnormal load events.
Recommended
Recommended Products Summary
Engineering reference data for ISZ033N03LF2SATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ019N03L5SATMA1 | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | BSC0921NDIATMA1 | ISC015N06NM5LF2ATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8 FL | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 60 V | 40 V |
| Continuous Drain Current (TC=25C) | 109 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (TC=25C) | 71 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Key Differentiators
- Lowest RDS(on) in the Infineon 30V OptiMOS 5 PG-TSDSON-8 FL family (vs ISZ019N03L5SATMA1)
- Higher current capability than BSC-family 30V OptiMOS 5 PG-TSDSON-8 parts (vs BSZ0901NSIATMA1)
- 30V VDS optimized for 12V/24V low-voltage bus designs (vs ISC015N06NM5LF2ATMA1)
Design Notes
Estimated: at TA=25 C with no heatsink, the PG-TSDSON-8 FL package dissipates up to 3 W (3 W TA rating); at TC=25 C with infinite heatsink it can dissipate 71 W. For most PCB designs, plan thermal layout so the top pad connects via thermal vias (12+ vias, 0.3 mm drill) to an inner copper pour of at least 1 square inch. Without thermal vias the junction-to-ambient thermal resistance can exceed 60 C/W, limiting practical continuous current to 15 A in still air.
Use a gate-source resistor of 10-100 ohm in series with the gate driver output to damp the LC tank formed by gate-source capacitance and gate-loop inductance. Keep the gate drive loop as small as possible (loop area < 0.5 cm^2) to minimize ringing and dv/dt-induced turn-on. Place a 1 M ohm gate-source resistor from gate to source to keep the device off during power-up when the gate driver is in high-impedance.
The PG-TSDSON-8 FL uses a top-side exposed pad connected to the silicon drain. For best thermal performance, route the drain copper plane on the top PCB layer directly under the device and stitch 12+ thermal vias (0.3 mm drill, 1 oz copper plating) to inner planes. Keep the source connection traces short and wide to minimize parasitic source inductance that would otherwise slow turn-on and increase switching loss.
Do not exceed the absolute maximum VGS rating (typically +/- 20 V for OptiMOS 5); use a gate-source Zener clamp if the gate driver is at risk of exceeding this limit during fault conditions. The 30 V VDS rating is absolute maximum at TJ=25 C - derate by 20% for typical application design margin. Ensure the source pin current path is sized to handle 109 A peak during TC operation; PCB copper thickness matters more than trace width at this current level.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial/consumer grade MOSFET.
