ITS4200SMEPHUMA1 vs BTS3011TEATMA1 Comparison
Detailed side-by-side comparison of ITS4200SMEPHUMA1 by Infineon and BTS3011TEATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ITS4200SMEPHUMA1 | BTS3011TEATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Smart High-Side Power Switch | Smart Low-Side Power Switch |
| Topology | High-Side, N-Channel MOSFET | — |
| Number of Channels | 1 | 1 |
| Continuous Load Current | 1.4 A | 10 A |
| On-State Resistance (Rdson) | 150 milliohm (typical) | — |
| Supply Voltage Range | -3 V to 45 V | — |
| Overvoltage Protection | Yes (load-dump resilient) | — |
| Undervoltage Shutdown | Yes | — |
| Short Circuit Protection | Yes | — |
| Thermal Shutdown | Yes (with auto-restart) | — |
| Current Limitation | Yes | — |
| Input Logic Type | Current-Controlled, CMOS-compatible | — |
| Inductive Load Switching | Yes | — |
| Package | PG-SOT223-4 (4-pin, 3+Tab) | PG-TO252-5 (DPAK-5) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40C to +125C (automotive grade) | — |
| AEC-Q100 Qualification | Yes | Grade 1 qualified |
| Technology | Smart Power (vertical N-DMOS + charge pump + CMOS logic) | — |
| RoHS Status | Compliant | Compliant |
| On-Resistance R_DS(on) (typ.) | — | 11 mΩ |
| Operating Voltage Range | — | 3 V to 28 V |
| Switch Technology | — | N-channel vertical power MOSFET |
| Input Type | — | Logic-level CMOS compatible |
| Number of Pins | — | 5 (4 + Tab) |
| Operating Junction Temperature | — | -40 °C to +150 °C |
| ESD Protection (HBM) | — | ±8 kV (output pin) |
| Integrated Protections | — | Current limit, overtemperature shutdown, overvoltage clamp, ESD, ground-loss protection |
| Diagnostic Output | — | Open-drain status feedback pin |